Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots

Nguyen, D. T.; Wüster, W.; Roussignol, Ph.; Voisin, C.; Cassabois, G.; Tchernycheva, M.; Julien, F. H.; Guillot, F.; Monroy, E.
August 2010
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p061903
Academic Journal
We present homogeneous line width measurements of the intraband transition at 1.55 μm in GaN/AlN quantum dots by means of nonlinear spectral hole-burning experiments. The square-root dependence of the differential transmission signal with the incident pump power reveals the importance of electron-electron scattering in the population relaxation dynamics. We find on the contrary that this scattering process plays a minor role in the coherence relaxation dynamics since the homogeneous linewidth of 15 meV at 5 K does not depend on the incident pump power. This suggests the predominance of other dephasing mechanisms such as spectral diffusion, and temperature-dependent measurements support this hypothesis.


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