TITLE

Quantification of trap densities at dielectric/III–V semiconductor interfaces

AUTHOR(S)
Engel-Herbert, Roman; Yoontae Hwang; Stemmer, Susanne
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p062905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-frequency capacitance-voltage curves for capacitors with high-k gate dielectrics and III–V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the Γ valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (Dit) and band bending of HfO2/In0.53Ga0.47As interfaces with different Dit and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting Dit are discussed and criteria that establish unpinned interfaces are developed.
ACCESSION #
52929603

 

Related Articles

  • HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer. He, G.; Zhang, L. D.; Liu, M.; Sun, Z. Q. // Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p062908 

    In this letter, treatment of GaAs surface by using dimethylaluminumhydride-derived AlON passivation layer prior to HfO2 deposition is proposed to solve the issue of Fermi level pinning. It has been found that AlON passivation layer effectively suppresses the oxides formation and leads to the...

  • Advanced Capacitance Metrology for Nanoelectronic Device Characterization. Richter, Curt A.; Kopanski, Joseph J.; Chong Jiang; Yicheng Wang; Afridi, M. Yaqub; Xiaoxiao Zhu; Ioannou, D. E.; Qiliang Li // AIP Conference Proceedings;9/28/2009, Vol. 1173 Issue 1, p328 

    We designed and fabricated a test chip (consisting of an array of metal-oxide-semiconductor (MOS) capacitors and metal-insulator-metal (MTM) capacitors ranging from 0.3 fF to 1.2 pF) for use in evaluating the performance of new measurement approaches for small capacitances. The complete array of...

  • Determining effective dielectric thicknesses of metal-oxide-semiconductor structures in.... Hu, C.-Y.; Kencke, D.L. // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1638 

    Measures the metal oxide semiconductor (MOS) capacitance in the hole accumulation mode to extract the effective dielectric thickness. Clarification of the discrepancy between experimental data and theoretical prediction by classical MOS theories; Determination of effective dielectric thickness...

  • The effect of band offset on the retention properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3,Y2O3)-semiconductor capacitors and field effect transistors. Su, Yu-Di; Shih, Wen-Chieh; Lee, Joseph Ya-min // Applied Physics Letters;9/17/2007, Vol. 91 Issue 12, p122902 

    Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) and capacitors with the structures of Al/Pb (Zr0.53,Ti0.47) O3 (PZT)/Dy2O3/Si and Al/PZT/Y2O3/Si were fabricated. The variation of the memory window as a function of annealing temperature was studied. The maximum...

  • Influence of donor-donor interaction on the metal-insulator transition in doped semiconductors. Mikheev, V. M. // Physics of the Solid State;Nov97, Vol. 39 Issue 11, p1774 

    The Mott metal-insulator transition in slightly compensated semiconductors with a simple dispersion law (of the InSb type) is investigated. A microscopic description is given for the metalinsulator transition under conditions such that the impurity band overlaps the conduction band in the...

  • Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator. Yamamoto, Y.; Kita, K.; Kyuno, K.; Toriumi, A. // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p032903 

    Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high...

  • Capacitive-type counter of nanoparticles in air. Iskra, I.; Detela, A.; Virsšek, M.; Nemanicč, V.; Krizžaj, D.; Golob, D.; van Elteren, J. T.; Remsškar, M. // Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p093504 

    A capacitive-type counter of nanoparticles in air, based on measurement of the capacitance of a capacitor with a variable dielectric part, has been developed. The method is suitable for detection of aerosols in a wide concentration range, regardless of shape or chemical composition. The method...

  • Critical Review of Converter Topologies for Switched Reluctance Motor Drives. Elwakil, E. S.; Darwish, M. K. // International Review of Electrical Engineering;Jan/Feb2007, Vol. 2 Issue 1, p50 

    This paper represents an overall literature review of SRM convenient drive circuit topologies with the proposal of a new topology utilizing switched capacitance circuit. The known topologies of SRM drive circuits were critically reviewed and compared. The main configurations and classifications...

  • A digitally programmable capacitance standard. Yicheng Wang; Lai Lee, R.S. // Review of Scientific Instruments;Apr2004, Vol. 75 Issue 4, p1158 

    We constructed a digitally programmable capacitance standard by modifying a commercial temperature-stabilized 100 pF capacitance standard which consists of 23 binary-weighted capacitor elements on a single fused-silica disk. The variable capacitor can be programmed through a computer from 0.000...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics