HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

He, G.; Zhang, L. D.; Liu, M.; Sun, Z. Q.
August 2010
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p062908
Academic Journal
In this letter, treatment of GaAs surface by using dimethylaluminumhydride-derived AlON passivation layer prior to HfO2 deposition is proposed to solve the issue of Fermi level pinning. It has been found that AlON passivation layer effectively suppresses the oxides formation and leads to the Fermi level unpinning at the interface between GaAs and HfO2. Based on analysis from metal-oxide-semiconductor capacitors of Au/HfO2/AlON/GaAs stack, excellent capacitance-voltage characteristics with saturated accumulation capacitance and reduced leakage current have been achieved, which may originate from the decrease in the interface state density and the increase in the conduction band offset.


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