TITLE

Bistable resistance memory switching effect in amorphous InGaZnO thin films

AUTHOR(S)
Kim, C. H.; Jang, Y. H.; Hwang, H. J.; Song, C. H.; Yang, Y. S.; Cho, J. H.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p062109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a bistable resistance switching effect in amorphous InGaZnO (a-IGZO) thin films deposited by a pulsed laser deposition method. The electrical properties of a-IGZO thin films were controlled by the oxygen partial pressure during deposition and this determined the resistance switching effect. We also observed the resistance switching effect with various electrodes such as Pt, Au, and Al. We suggest that the resistance switching effect is related to the formation of a conducting path by metal and/or oxygen vacancy defects in the a-IGZO matrix.
ACCESSION #
52929584

 

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