TITLE

Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

AUTHOR(S)
Meneghini, M.; Stocco, A.; Ronchi, N.; Rossi, F.; Salviati, G.; Meneghesso, G.; Zanoni, E.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p063508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This paper reports on an extensive analysis of the electroluminescence spectra of GaN-based high-electron mobility transistors (HEMT) submitted to different bias regimes. The results described within this paper indicate that: (i) under ON-state bias conditions, HEMT can emit a weak luminescence signal, localized at the edge of the gate toward the drain side; (ii) for low drain voltage levels, the electroluminescence spectrum has a Maxwellian shape, which is typical for hot carrier luminescence; (iii) for high drain voltage levels, parasitic emission bands are generated, possibly due to the recombination of hot electrons through defect-related sites. Electroluminescence data are compared with results of cathodoluminescence measurements, to provide an interpretation for the experimental results.
ACCESSION #
52929564

 

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