TITLE

Incorporating polaritonic effects in semiconductor nanowire waveguide dispersion

AUTHOR(S)
van Vugt, Lambert K.; Piccione, Brian; Agarwal, Ritesh
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p061115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present the calculated and measured energy-propagation constant (E-β) dispersion of CdS nanowire waveguides at room temperature, where we include dispersive effects via the exciton-polariton model using physical parameters instead of a phenomenological equation. The experimental data match well with our model while the phenomenological equation fails to capture effects originating due to light-matter interaction in nanoscale cavities. Due to the excitonic-polaritonic effects, the group index of the guided light peaks close to the band edge, which can have important implications for optical switching and sensor applications.
ACCESSION #
52929561

 

Related Articles

  • 2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm. Masini, Gianlorenzo; Colace, Lorenzo; Assanto, Gaetano // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2524 

    We report on a fast polycrystalline germanium-on-silicon heterojunction photodetector for the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with responsivities of 16 and 5...

  • Technique for integration of vertical cavity lasers and resonant photodetectors. Sjo¨lund, O.; Louderback, D. A.; Hegblom, E. R.; Ko, J.; Coldren, L. A. // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    We demonstrate a design that allows fabrication of substrate input/output resonant-cavity photodetectors and vertical cavity lasers (VCLs) on the same substrate without regrowth. By selectively oxidizing a few layers in the bottom mirror the as-grown 80% reflectivity mirror, used as the input...

  • Hole dominated transport in InGaAs metal semiconductor metal photodetectors. Hargis, Marian; Ralph, Stephen E. // Applied Physics Letters;7/17/1995, Vol. 67 Issue 3, p413 

    Measures the intrinsic photocurrent response of top and black illuminated planar metal-semiconductor-metal structures. Observance of the temporal dynamics of hole transport dependence on applied bias; Factors in understanding the increased hole transit time of black illuminated structures;...

  • Vertical forward coupler based channel-dropping photodetector. Sakata, Hajime; Kawasaki, Hideshi // Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1201 

    Demonstrates the basic principles of the integrated channel-dropping photodetector used in III-IV semiconductors. Effect of the integrated photodetector on the overall quantum efficiency; Result of the photocurrent spectra for various grating periods; Use of a grating-coupled gallium...

  • Innovative photoreceivers simplify measurements. Hultgren, Charlie // Laser Focus World;Sep98, Vol. 34 Issue 9, p123 

    Outlines the use of semiconductor photodiodes combined with analog circuitry in optical detection applications such as atmospheric, biological and spectroscopic studies. Application of balanced photoreceiver in sensitive measurements; Measurement of atmospheric potassium; Role of femtowatt...

  • Two-dimensional numerical simulation of the pulse response of a semi-insulating InGaAs:Fe photodetector. Hurd, C. M.; McKinnon, W. R. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5756 

    Presents a study that described a calculation of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contacts made to an active layer of semi-insulating InGaAs:Fe that is supported on an InP:Fe substrate. Simulation details; Impulse response...

  • High-speed multiplication-type photodetecting device using organic codeposited films. Matsunobu, Goh; Oishi, Yuko; Yokoyama, Masaaki; Hiramoto, Masahiro // Applied Physics Letters;8/12/2002, Vol. 81 Issue 7, p1321 

    High-speed photocurrent multiplication devices using codeposited films of copper phthalocyanine and fullerene were fabricated. The photoresponse time for the light-on and -off reached 3 and 15 ms, respectively, which were in striking contrast to those for single fullerene films requiring several...

  • Dispersion of confined optical phonons in semiconductor nanowires in the framework of a continuum approach. Comas, F.; Camps, I.; Marques, G. E.; Studart, Nelson // Journal of Applied Physics;2/1/2007, Vol. 101 Issue 3, p033525 

    Confined optical phonons are discussed for a semiconductor nanowire of the Ge (Si) prototype on the basis of a theory developed some years ago. In the present work this theory is adapted to a nonpolar material and generalized to the case when the phonon dispersion law involves both linear and...

  • A new imaging method for understanding chemical dynamics: Efficient slice imaging using an in-vacuum pixel detector. Jungmann, J. H.; Gijsbertsen, A.; Visser, J.; Visschers, J.; Heeren, R. M. A.; Vrakking, M. J. J. // Review of Scientific Instruments;Oct2010, Vol. 81 Issue 10, p103112 

    The implementation of the Timepix complementary metal oxide semiconductor pixel detector in velocity map slice imaging is presented. This new detector approach eliminates the need for gating the imaging detector. In time-of-flight mode, the detector returns the impact position and the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics