TITLE

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

AUTHOR(S)
Rangel, Elizabeth; Matioli, Elison; Hung-Tse Chen; Yong-Seok Choi; Weisbuch, Claude; Speck, James S.; Hu, Evelyn L.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p061118
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 μm were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both cases. The 800-nm-thick PhC LEDs yielded only a slight improvement in total light output over the 3.45-μm-thick PhC LEDs. Simulations indicate that, except for ultrathin devices well below 800 nm, the balance between PhC extraction and metal absorption at the backside mirror results in modal extraction efficiencies that are almost independent of device thickness, but highly dependent on mirror reflectivity.
ACCESSION #
52929557

 

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