Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

Rangel, Elizabeth; Matioli, Elison; Hung-Tse Chen; Yong-Seok Choi; Weisbuch, Claude; Speck, James S.; Hu, Evelyn L.
August 2010
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p061118
Academic Journal
Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 μm were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both cases. The 800-nm-thick PhC LEDs yielded only a slight improvement in total light output over the 3.45-μm-thick PhC LEDs. Simulations indicate that, except for ultrathin devices well below 800 nm, the balance between PhC extraction and metal absorption at the backside mirror results in modal extraction efficiencies that are almost independent of device thickness, but highly dependent on mirror reflectivity.


Related Articles

  • GaN/AlN-based quantum-well infrared photodetector for 1.55 μm. Hofstetter, Daniel; Schad, Sven-Silvius; Wu, Hong; Schaff, William J.; Eastman, Lester F. // Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p572 

    We report optical absorption and photocurrent measurements on a GaN/AlN-based superlattice. The optical absorption has a full width at half maximum of 120 meV and takes place at an energy of 660 meV (5270 cm[SUP-1]); this corresponds to a wavelength of 1.9 μm. While the optical absorption...

  • An organic p-i-n homojunction as ultra violet light emitting diode and visible-blind photodiode in one. Hamwi, S.; Riedl, T.; Kowalsky, W. // Applied Physics Letters;8/1/2011, Vol. 99 Issue 5, p053301 

    Organic p-i-n homojunctions that function both as ultra violet light emitting diode (peak wavelengths around 375 nm and 415 nm) and visible-blind photodiode are reported. They are considered as the organic counterpart to what has exclusively been known from inorganic semiconductors, as yet. The...

  • On absorption on polycrystalline substrates. Davydov, S. Yu.; Troshin, S. V. // Technical Physics;May2008, Vol. 53 Issue 5, p664 

    The effect of a polycrystalline substrate on the charge of adatoms and on the work function is considered in terms of the Anderson-Newns model. Polycrystallinity is characterized by deviation δϕ i of the work function of the ith face from mean value 〈ϕ i 〉. It is found...

  • Ion Beam Surface Modification of GaN Films for High Efficient Light Emitting Diodes. WU, G. M.; LIN, Y. S.; TU, K. N. // Acta Physica Polonica, A.;May2013, Vol. 123 Issue 5, p884 

    Focused gallium (Ga) ion beam technology has been proposed to modify the surface of GaN thin films. Due to the significant advancement in nitride semiconductors, the solid-state light emitting diodes will gradually replace fiuorescent lamps in the next decade. However, further improvements in...

  • Self-consistent analysis of the contact phenomena in low-mobility semiconductors. Preezant, Yevgeni; Tessler, Nir // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p2059 

    Self-consistent solution of charge injection and charge transport in low mobility light emitting diodes (LEDs) is reported. We show that an explicit description of the contact region under the same premise as the transport equations is needed to accurately evaluate the current-voltage...

  • Optimization of white polychromatic semiconductor lamps. Žukauskas, A.; Vaicekauskas, R.; Ivanauskas, F.; Gaska, R.; Shur, M. S. // Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p234 

    A stochastic method of optimization of a white-light source that relies on additive color mixing of the emissions from colored light-emitting diodes (LEDs) was developed. The method allows for finding the optimal wavelengths of LEDs in order to obtain the best possible trade off between luminous...

  • Cavity detuning effects in semiconductor microcavity light emitting diodes. Pratt, A.R.; Takamori, T. // Journal of Applied Physics;6/15/2000, Vol. 87 Issue 12, p8243 

    Presents information on a study which investigated the cavity detuning effects of the emission properties in semiconductor microcavity light emitting diodes. Sample preparation; Characterization techniques; Results and discussions; Conclusions.

  • NEW TECHNIQUE MAKES LEDS BRIGHTER AND MORE RESILIENT.  // Electronics World;Apr2014, Vol. 120 Issue 1936, p7 

    The article reports on a new processing technique developed by researcher Stewart Wilkins and colleagues that makes light emitting diodes (LEDs) brighter and more resilient by coating the semiconductor material gallium nitride (GaN) with a layer of phosphorus-derived acid.

  • LEDs 101. Budimer, Miles; Korane, Kenneth // Machine Design;3/21/2002, Vol. 74 Issue 6, p72 

    Lists several factors which affect the performance of light-emitting diodes. Color; Visibility; Voltage and current.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics