Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors

Rumin Gong; Jinyan Wang; Shenghou Liu; Zhihua Dong; Min Yu; Wen, Cheng P.; Yong Cai; Baoshun Zhang
August 2010
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p062115
Academic Journal
A mechanism of the formation of the bulges on the surface of Ti/Al/Ni/Au Ohmic contact in AlGaN/GaN high electron mobility transistors is proposed. According to the analysis of TEM images and corresponding electron dispersive x-ray spectra, the bulges were found to consist of Ni–Al alloy in the body and Au–Al alloy surrounding. We deduce that the bulges were formed due to Ni–Al alloy aggregation in some local areas during the rapid thermal annealing process, which accounts for the rough surface morphology.


Related Articles

  • Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment. Fujishima, Tatsuya; Joglekar, Sameer; Piedra, Daniel; Lee, Hyung-Seok; Zhang, Yuhao; Uedono, Akira; Palacios, Tomás // Applied Physics Letters;8/19/2013, Vol. 103 Issue 8, p083508 

    A BCl3 surface plasma treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors with a GaN cap layer has been established. This BCl3 plasma treatment was performed by an inductively coupled plasma reactive ion...

  • Ti/Au n-type Ohmic contacts to bulk ZnO substrates. Hyuck Soo Yang; Norton, D. P.; Pearton, S. J.; Ren, F. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p212106 

    Electron-beam-deposited Ti/Au ohmic contacts on undoped (n∼1017 cm-3) bulk ZnO substrates exhibited as-deposited specific contact resistivity of 3×10-4 Ω cm2, regardless of the polarity (Zn face or O face) of the ZnO substrate. The annealing environment (air or N2) also had no...

  • Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field. Kazantseva, Z.; Kislyuk, V.; Kozyarevych, I.; Lozovski, V.; Tretyak, O. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2005, Vol. 8 Issue 4, p80 

    The conductance relaxation of Langmuir-Blodgett films of manganese phthalocyanine in inhomogeneous electrical field was studied. Inhomogeneous electrical field was achieved by using the lateral surface of reverse-biased Si p-n junction. The conductance of new film increases up to saturation with...

  • Erratum: 'Kinase detection with gallium nitride based high electron mobility transistors' [Appl. Phys. Lett. 103, 013701 (2013)]. Makowski, Matthew S.; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena // Applied Physics Letters;8/19/2013, Vol. 103 Issue 8, p089902 

    A correction to the article "Kinase detection with gallium nitride based high electron mobility transistors" that was published in a previous issue of the journal is presented.

  • Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method. Gentsar, P. A.; Vlasenko, A. I.; Kudryavtsev, A. A. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2005, Vol. 8 Issue 4, p85 

    Relations between the Keldysh-Franz oscillations with electron parameters of semiconductor materials were used to derive qualitative data for homoepitaxial films n-GaAs (100) from their electroreflectance spectra. The spectra were measured using the Shottky barrier method at the temperature 300...

  • Stable hydrogen sensors from AlGaN/GaN heterostructure diodes with TiB2-based Ohmic contacts. Wang, Hung-Ta; Anderson, T. J.; Kang, B. S.; Ren, F.; Li, Changzhi; Low, Zhen-Ning; Lin, Jenshan; Gila, B. P.; Pearton, S. J.; Osinsky, A.; Dabiran, Amir // Applied Physics Letters;6/18/2007, Vol. 90 Issue 25, p252109 

    The use of TiB2-based Ohmic contacts on Pt-gate AlGaN/GaN heterostructure diode hydrogen sensors is shown to provide very stable operation for detection of 1% H2 in air under field conditions where temperature is allowed to vary. In contrast, the use of more conventional Ti/Al/Pt/Au Ohmic...

  • Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures. Boltovets, N. S.; Konakova, R. V.; Kudryk, Ya. Ya.; Milenin, V. V.; Mitin, V. F.; Mitin, E. V.; Lytvyn, O. S.; Kapitanchuk, L. M. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2006, Vol. 9 Issue 2, p58 

    We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at T =...

  • Ohmic cathode for low-voltage organic light-emitting diodes. Feng, X. D.; Huang, C. J.; Lui, V.; Khangura, R. S.; Lu, Z. H. // Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p143511 

    It is found that voltage-current characteristics of Al/C60 interfaces are fundamentally altered from a strong rectifying junction to an Ohmic junction where a LiF interlayer is used. Al/LiF/C60 has been used as an Ohmic cathode for organic light-emitting diode (OLED). The Ohmic cathode together...

  • Terahertz response of field-effect transistors in saturation regime. Elkhatib, T. A.; Kachorovskii, V. Yu.; Stillman, W. J.; Rumyantsev, S.; Zhang, X.-C.; Shur, M. S. // Applied Physics Letters;6/13/2011, Vol. 98 Issue 24, p243505 

    We report on the broadband terahertz response of InGaAs/GaAs high electron mobility transistors operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain-bias current) and might reach very...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics