Optical properties of quaternary GaNAsP semiconductor alloys

Egorov, A. Yu.; Kryzhanovskaya, N. V.; Pirogov, E. V.; Pavlov, M. M.
July 2010
Semiconductors;Jul2010, Vol. 44 Issue 7, p857
Academic Journal
The optical properties of quaternary GaNAsP semiconductor alloys grown on a GaP (100) substrate surface are studied by photoluminescence spectroscopy in the temperature range 20–300 K and by photoluminescence excitation spectroscopy at liquid-nitrogen temperature. The measurements are carried out for the GaNAsP alloys, for which the nitrogen and arsenic molar fractions x and y range from 0.006 to 0.012 and from 0.00 to 0.18, respectively. A comparative analysis of the data is conducted, and the dependences of the energy position of the photoluminescence peak on the composition of the quaternary alloy are established. From the studies of photoluminescence in the range 20–300 K, it is found that the temperature dependence of the position of the photoluminescence peak substantially differs from the behavior described by Varshni’s expression.


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