Quantum well saturable absorber mirror with electrical control of modulation depth

Xiaomin Liu; Rafailov, Edik U.; Livshits, Daniil; Turchinovich, Dmitry
August 2010
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p051103
Academic Journal
We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 μJ/cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.


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