TITLE

Vertical low-voltage oxide transistors gated by microporous SiO2/LiCl composite solid electrolyte with enhanced electric-double-layer capacitance

AUTHOR(S)
Jie Jiang; Jia Sun; Bin Zhou; Aixia Lu; Qing Wan
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p052104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Vertical low-voltage indium-tin oxide field-effect transistors (FETs) gated by microporous SiO2-based solid electrolyte are fabricated at room temperature. Our results indicate that Li ions can enhance the electric-double-layer capacitance of the microporous SiO2 solid electrolyte and reduce the operation voltage of the vertical FETs from 1.5 to 0.8 V. Such vertical low-voltage FETs exhibited a good performance with a high current output (∼1.0 A/cm2), a low subthreshold swing (<80 mV/decade), and a large on-off ratio (>106), respectively. An operation mechanism which provides a better insight into the oxide-based vertical FETs is discussed.
ACCESSION #
52802639

 

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