Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices

Lichang Zeng; Tang, Ching W.; Chen, Shaw H.
August 2010
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p053305
Academic Journal
The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active layer thickness, reflecting largely a reduction in the short-circuit current density and an inverse photocurrent spectral response. Thermal annealing of the full devices was found to substantially recover thick-film device efficiencies while reducing the thin-film device efficiencies. The profound variations in photovoltaic characteristics were interpreted in terms of vertical phase separation in the P3HT:PCBM blend film and Li+ diffusion from the LiF/Al contact.


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