Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

Wierer, J. J.; Allerman, A. A.; Li, Q.
August 2010
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p051907
Academic Journal
Impurity-induced layer disordering is demonstrated in Al0.1Ga0.9N/AlN superlattices grown by metal-organic vapor phase epitaxy. During growth at temperatures as low as 885 °C and under post growth annealing at 1000 °C in N2 the heterointerfaces of Si-doped (Si concentration >8×1019 cm-3) superlattices exhibit layer disordering (intermixing) while the unintentionally doped superlattices remain stable. Shifts in the intersubband energy transitions and scanning transmission electron microscope images showing changes in the layer abruptness are used to verify layer disordering due to Si diffusion in Al0.1Ga0.9N/AlN superlattices.


Related Articles

  • Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures. Samberg, Joshua P.; Alipour, Hamideh M.; Bradshaw, Geoffrey K.; Zachary Carlin, C.; Colter, Peter C.; LeBeau, James M.; El-Masry, N. A.; Bedair, Salah M. // Applied Physics Letters;8/12/2013, Vol. 103 Issue 7, p071605 

    (In,Ga)As/Ga(As,P) multiple quantum wells (MQWs) with GaAs interface layers have been characterized with photoluminescence (PL) and high resolution scanning transmission electron microscopy (STEM). By growing (In,Ga)As/Ga(As,P) MQWs with asymmetric GaAs interfacial layers, we found that...

  • Structural and optical properties of GaInP grown on germanium by metal-organic chemical vapor deposition. He, W.; Lu, S. L.; Dong, J. R.; Zhao, Y. M.; Ren, X. Y.; Xiong, K. L.; Li, B.; Yang, H.; Zhu, H. M.; Chen, X. Y.; Kong, X. // Applied Physics Letters;9/20/2010, Vol. 97 Issue 12, p121909 

    Structural and optical properties of Si-doped as well as nominally undoped GaInP epilayers grown on Germanium substrates by metal-organic chemical vapor deposition have been investigated by high resolution transmission electron microscope and photoluminescence (PL). Si incorporation results in...

  • Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition. Thomas, Reji; Ehrhart, Peter; Luysberg, Martina; Boese, Markus; Waser, Rainer; Roeckerath, Martin; Rije, Eduard; Schubert, Juergen; Van Elshocht, Sven; Caymax, Matty // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p232902 

    Dysprosium scandate (DyScO3) thin films were deposited on Si substrates using metal-organic chemical vapor deposition. Individual source precursors of Dy and Sc were used and deposition temperatures ranged from 480 to 700 °C. Films were amorphous with low root mean square roughness (<=2...

  • Atomic scale structure and chemistry of Bi2Te3/GaAs interfaces grown by metallorganic van der Waals epitaxy. Houston Dycus, J.; White, Ryan M.; Pierce, Jonathan M.; Venkatasubramanian, Rama; LeBeau, James M. // Applied Physics Letters;2/25/2013, Vol. 102 Issue 8, p081601 

    Here, we report the atomic scale structure and chemistry of epitaxial Bi2Te3 thin films grown via metallorganic chemical vapor deposition on (001) GaAs substrates. Using aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM), we report an...

  • Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates. Bai, J.; Gong, Y.; Xing, K.; Yu, X.; Wang, T. // Applied Physics Letters;3/11/2013, Vol. 102 Issue 10, p101906 

    (1120) non-polar and (1122) semi-polar GaNs with a low defect density have been achieved by means of an overgrowth on nanorod templates, where a quick coalescence with a thickness even below 1 μm occurs. On-axis and off-axis X-ray rocking curve measurements have shown a massive reduction in...

  • Characteristics of high-quality p-type Al[sub x]Ga[sub 1-x]N/GaN superlattices. Yasan, A.; McClintock, R.; Darvish, S. R.; Lin, Z.; Mi, K.; Kung, P.; Razeghi, M. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2108 

    Very-high-quality p-type Al[sub x]Ga[sub 1-x]N/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x=26%, the hole concentration reaches a high value of 4.2 x 10[sup 18]...

  • Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry. Sik, J.; Schubert, M.; Leibiger, G.; Gottschalch, V.; Kirpal, G.; Humlícek, J. // Applied Physics Letters;5/15/2000, Vol. 76 Issue 20 

    The optical properties of GaAs/GaN[sub x]As[sub 1-x] superlattice structures grown by metal-organic vapor-phase epitaxy are studied by variable angle-of-incidence spectroscopic ellipsometry for photon energies from 0.75 to 1.55 eV. We employ Adachi's critical-point composite model, and we report...

  • Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells. Hu, Yan-Ling; Farrell, Robert M.; Neufeld, Carl J.; Iza, Michael; Cruz, Samantha C.; Pfaff, Nathan; Simeonov, Dobri; Keller, Stacia; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Speck, James S. // Applied Physics Letters;4/16/2012, Vol. 100 Issue 16, p161101 

    A two-step GaN barrier growth methodology was developed for InxGa1-xN/GaN multiple quantum well solar cells in which a lower temperature GaN cap layer was grown on top of the quantum wells (QWs) and then followed by a higher temperature GaN barrier layer. The performance of the solar cells...

  • Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy. Wang, P.; Bleloch, A. L.; Falke, M.; Goodhew, P. J.; Ng, J.; Missous, M. // Applied Physics Letters;8/14/2006, Vol. 89 Issue 7, p072111 

    The authors present a direct method to quantitatively measure the indium composition of buried InAs quantum dots embedded in a GaAs matrix. In this method, spatially resolved electron-energy-loss spectroscopy combined with aberration-corrected scanning transmission electron microscopy at atomic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics