TITLE

Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

AUTHOR(S)
Wierer, J. J.; Allerman, A. A.; Li, Q.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p051907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Impurity-induced layer disordering is demonstrated in Al0.1Ga0.9N/AlN superlattices grown by metal-organic vapor phase epitaxy. During growth at temperatures as low as 885 °C and under post growth annealing at 1000 °C in N2 the heterointerfaces of Si-doped (Si concentration >8×1019 cm-3) superlattices exhibit layer disordering (intermixing) while the unintentionally doped superlattices remain stable. Shifts in the intersubband energy transitions and scanning transmission electron microscope images showing changes in the layer abruptness are used to verify layer disordering due to Si diffusion in Al0.1Ga0.9N/AlN superlattices.
ACCESSION #
52802621

 

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