TITLE

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

AUTHOR(S)
Inrok Hwang; Myung-Jae Lee; Gyoung-Ho Buh; Jieun Bae; Jinsik Choi; Jin-Soo Kim; Sahwan Hong; Yeon Soo Kim; Ik-Su Byun; Seung-Woong Lee; Seung-Eon Ahn; Bo Soo Kang; Sung-Oong Kang; Bae Ho Park
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p052106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10-2 and 10-4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2-) is responsible for the switching transition in Pt/NiO/Pt structures.
ACCESSION #
52802620

 

Related Articles

  • Ionic doping effect in ZrO2 resistive switching memory. Haowei Zhang; Bin Gao; Bing Sun; Guopeng Chen; Lang Zeng; Lifeng Liu; Xiaoyan Liu; Jing Lu; Ruqi Han; Jinfeng Kang; Bin Yu // Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p123502 

    Oxygen vacancy (VO) plays the critical role for resistive switching in transition metal oxide resistive random access memory (RRAM). First principles calculation is performed to study the impact of metallic ion (Al, Ti, or La) doping in ZrO2 on the behaviors of VO, including defect energy level...

  • Effect of Hf incorporation in solution-processed NiOx based resistive random access memory. Doo Hyun Yoon; Si Joon Kim; Joohye Jung; Seung Jin Heo; Hyun Jae Kim // Applied Physics Letters;3/3/2014, Vol. 104 Issue 9, p1 

    Resistive random access memory based on transition metal oxide materials has attracted much recent attention for the development of next-generation non-volatile memory. The Hf:NiOx devices showed driving mode transformation by the Hf content in the system. Unipolar resistive switching was...

  • A non-filamentary model for unipolar switching transition metal oxide resistance random access memories. Kan-Hao Xue; de Araujo, Carlos A. Paz; Celinska, Jolanta; McWilliams, Christopher // Journal of Applied Physics;May2011, Vol. 109 Issue 9, p091602 

    A model for resistance random access memory (RRAM) is proposed. The RRAM under research utilizes certain transition metal oxide (TMO) such as NiO which shows unipolar switching behavior. The existence of metal/insulator states is not explained by filaments but attributed to different Hubbard U...

  • Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling. Meinerzhagen, Pascal; Teman, Adam; Giterman, Robert; Burg, Andreas; Fish, Alexander // Journal of Low Power Electronics & Applications;Jun2013, Vol. 3 Issue 2, p54 

    Ultra-low power applications often require several kb of embedded memory and are typically operated at the lowest possible operating voltage (VDD) to minimize both dynamic and static power consumption. Embedded memories can easily dominate the overall silicon area of these systems, and their...

  • Analysis of the Effect of Temperature and Vdd on Leakage Current in Conventional 6T-SRAM Bit-Cell at 90nm and 65nm Technology. Neeraj Kr.Shukla; Shilpi Birla; Kapil Rathi; R.K.Singh; Manisha Pattanaik // International Journal of Computer Applications;Jul2011, Vol. 26, p44 

    The increased demand for battery operated portable semiconductor applications and continuous scaling of CMOS devices, results high packaging density but increases the importance of power even more noticeable for a new class of energy constrained systems. Recent Low-Power VLSI design interest is...

  • Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications. Huang, Ru; Zhang, Lijie; Gao, Dejin; Pan, Yue; Qin, Shiqiang; Tang, Poren; Cai, Yimao; Wang, Yangyuan // Applied Physics A: Materials Science & Processing;Mar2011, Vol. 102 Issue 4, p927 

    This paper discusses the resistive switching devices based on highly compatible silicon-rich-oxide, including silicon monoxide (SiO) and SiON material, which can be fabricated by low temperature process, and thus fully compatible with the back-end CMOS technology. The demonstrated SiO based RRAM...

  • Multilevel resistive switching memory with amorphous InGaZnO-based thin film. Hsu, Ching-Hui; Fan, Yang-Shun; Liu, Po-Tsun // Applied Physics Letters;2/11/2013, Vol. 102 Issue 6, p062905 

    Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying...

  • A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM. Chien, W.; Chen, Y.; Lai, E.; Lee, F.; Lin, Y.; Chuang, Alfred; Chang, K.; Yao, Y.; Chou, T.; Lin, H.; Lee, M.; Shih, Y.; Hsieh, K.; Lu, Chih-Yuan // Applied Physics A: Materials Science & Processing;Mar2011, Vol. 102 Issue 4, p901 

    Tungsten oxide (WO) resistive memory (ReRAM), a two-terminal CMOS compatible nonvolatile memory, has shown promise to surpass the existing flash memory in terms of scalability, switching speed, and potential for 3D stacking. The memory layer, WO, can be easily fabricated by down-stream plasma...

  • A 2.4-GHz highly linear derivative superposition Gilbert cell mixer. SEDIGHI, Samaneh; HASHEMIPOUR, Omid; DOUSTI, Massoud // Turkish Journal of Electrical Engineering & Computer Sciences;2016, Vol. 24 Issue 2, p571 

    This paper presents a new derivative superposition Gilbert cell to minimize the third-order nonlinear current term of transconductance transistors. To decrease the parasitic capacitance effect on gain, noise figure, and linearity of the circuit, extra inductors and capacitors are added between...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics