Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

Inrok Hwang; Myung-Jae Lee; Gyoung-Ho Buh; Jieun Bae; Jinsik Choi; Jin-Soo Kim; Sahwan Hong; Yeon Soo Kim; Ik-Su Byun; Seung-Woong Lee; Seung-Eon Ahn; Bo Soo Kang; Sung-Oong Kang; Bae Ho Park
August 2010
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p052106
Academic Journal
We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10-2 and 10-4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2-) is responsible for the switching transition in Pt/NiO/Pt structures.


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