TITLE

Effect of polarization-memory in SrTiO3/La0.9Sr0.1MnO3 multilayer on Si substrate

AUTHOR(S)
Yingtang Zhang; Yiming Zhang; Shengtao Li
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p052903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
SrTiO3/La0.9Sr0.1MnO3 (STO/LSMO) multilayer was fabricated on n-Si (100) substrate by using a computer-controlled laser molecular-beam epitaxy technique. A rectifying behavior was observed in the multilayer. Meanwhile, the capancitance-voltage (C-V) characteristics were investigated, which reveals a hysteresis memory effect in forward and backward bias regions. A detail study suggests that the hysteresis behaviors originate from the cooperation and competition between the interfacial polarization and trapping/detrapping mechanisms. Our results are expected to meet the high desire of the optimization and device design of random access memory.
ACCESSION #
52802619

 

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