TITLE

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

AUTHOR(S)
O'Mahony, A.; Monaghan, S.; Provenzano, G.; Povey, I. M.; Nolan, M. G.; O’Connor, É.; Cherkaoui, K.; Newcomb, S. B.; Crupi, F.; Hurley, P. K.; Pemble, M. E.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p052904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High mobility III-V substrates with high-k oxides are required for device scaling without loss of channel mobility. Interest has focused on the self-cleaning effect on selected III-V substrates during atomic layer deposition of Al2O3. A thin (∼1 nm) Al2O3 interface control layer is deposited on In0.53Ga0.47As prior to HfO2 growth, providing the benefit of self-cleaning and improving the interface quality by reducing interface state defect densities by ∼50% while maintaining scaling trends. Significant reductions in leakage current density and increased breakdown voltage are found, indicative of a band structure improvement due to the reduction/removal of the In0.53Ga0.47As native oxides.
ACCESSION #
52802617

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics