TITLE

Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials

AUTHOR(S)
Donetsky, Dmitry; Belenky, Gregory; Svensson, Stefan; Suchalkin, Sergei
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p052108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Minority carrier lifetime, τ, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg0.78Cd0.22Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured τ values. The Shockley–Read–Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 μs for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed.
ACCESSION #
52802613

 

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