Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO2/Si structure

Chong Qi Yu; Hui Wang
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p041105
Academic Journal
Recent study shows the resistance of a metal-oxide-semiconductor (MOS) structure can be controlled by a laser via a bipolar-resistance effect (BRE). Based on this BRE phenomenon, we find an overlapped offset effect which is induced by an external bias applying to the structure. This offset effect features with a moveable equilibrium point of BRE, suggesting a combined control to the resistance and adding functionality to the MOS-based photoelectric devices.


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