Resistance switching in polycrystalline BiFeO3 thin films

Kuibo Yin; Mi Li; Yiwei Liu; Congli He; Fei Zhuge; Bin Chen; Wei Lu; Xiaoqing Pan; Run-Wei Li
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p042101
Academic Journal
We report resistance switching effects in polycrystalline pure BiFeO3 films prepared by a sol-gel method. By current-voltage and conductive atomic force microscope (c-AFM) measurements, resistance switching effects are observed in BiFeO3 films annealed at and above 650 °C. A fresh sample can be transformed into a low-resistive state by applying a high positive voltage without forming process and then be switched to a high-resistive state by applying a negative voltage. Both c-AFM and retention results suggest that the redistribution of oxygen vacancies in grain boundaries could play a key role on the resistance switching in the polycrystalline pure BiFeO3 films.


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