TITLE

Photoemission of Si 1s→2pz transition in GaAs/AlGaAs quantum well for zero-dimensional states infrared detection

AUTHOR(S)
Antoni, Thomas; Carras, Mathieu; Marcadet, Xavier; Vinter, Borge; Berger, Vincent
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p042102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Intersubband absorption in a GaAs/AlGaAs quantum well usually happens between two two-dimensional (2D) electronic states. However for sufficiently low doping levels, the electrons can be entirely distributed on the silicon localized states. We demonstrate that depending on the temperature, absorption in such structures is dominated either by 2D quantum well states or by zero-dimensional localized Si states. We find a regime where the localized states are the main contributors to the photocurrent, this is expected to strongly impact the behavior of quantum well infrared photodetectors.
ACCESSION #
52616500

 

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