Gapless insulator and a band gap scaling law in semihydrogenated graphene

Wright, A. R.; O'Brien, T. E.; Beaven, D.; Zhang, C.
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p043104
Academic Journal
We demonstrate two unusual electronic properties of semihydrogenated graphene with variable sized A- or B-hydrogenated domains within the tight-binding formalism as follows: (i) a universal band gap scaling law which states that the band gap depends linearly upon the ratio of the number of A- to B-hydrogenated atoms, NA/NB, reaching zero gap at NA=NB, but independent of the domain size, and (ii) an insulating state with zero band gap at NA=NB, a rare phenomenon in nature. We confirm this gapless insulator state by the zero optical conductance at low frequencies.


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