Ni-catalyzed growth of silicon wire arrays for a Schottky diode

Sang-Won Jee; Joondong Kim; Jin-Young Jung; Han-Don Um; Moiz, Syed Abdul; Bongyoung Yoo; Hyung Koun Cho; Yun Chang Park; Jung-Ho Lee
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p042103
Academic Journal
Vertically grown Si wire arrays were fabricated on a large scale by the Ni-catalyzed vapor-liquid-solid method. A single Si wire has a length of several tens of micrometers with a pure Si stem and a NiSi2 tip. The NiSi2 tip was spontaneously formed on a Si wire due to a slight lattice mismatch relative to Si. Further, this system provides a Schottky contact having a rectifying ratio of ∼102 with a low leakage current of about 2.88×10-10 A. The growth mechanism of vertical Si wires and the performance of a Schottky diode are discussed.


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