TITLE

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

AUTHOR(S)
Lee, B.; Mordi, G.; Kim, M. J.; Chabal, Y. J.; Vogel, E. M.; Wallace, R. M.; Cho, K. J.; Colombo, L.; Kim, J.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p043107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present characteristics of dual-gated graphene devices with an Al2O3 gate dielectric formed by an O3-based atomic-layer-deposition process. Raman spectra reveal that a O3 process at 25 °C on single-layered graphene introduces the least amount defects, while a substantial number of defects appear at 200 °C. This graphene device with O3-based Al2O3 dielectric demonstrates a heterojunction within the graphene sheet when applying VTG and VBG and possesses good dielectric properties with minimal chemical doping, including a high dielectric constant ∼8, low hysteresis width ∼0.2 V, and low leakage current and a carrier mobility of 5000 cm2/V s 25 °C in ambient.
ACCESSION #
52616464

 

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