Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

Lee, B.; Mordi, G.; Kim, M. J.; Chabal, Y. J.; Vogel, E. M.; Wallace, R. M.; Cho, K. J.; Colombo, L.; Kim, J.
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p043107
Academic Journal
We present characteristics of dual-gated graphene devices with an Al2O3 gate dielectric formed by an O3-based atomic-layer-deposition process. Raman spectra reveal that a O3 process at 25 °C on single-layered graphene introduces the least amount defects, while a substantial number of defects appear at 200 °C. This graphene device with O3-based Al2O3 dielectric demonstrates a heterojunction within the graphene sheet when applying VTG and VBG and possesses good dielectric properties with minimal chemical doping, including a high dielectric constant ∼8, low hysteresis width ∼0.2 V, and low leakage current and a carrier mobility of 5000 cm2/V s 25 °C in ambient.


Related Articles

  • Transformation of an Unordered Structural Network in Amorphous Hydrogenated Silicon Films as a Result of Doping with Boron. Mezdrogina, M. M.; Patsekin, A. V. // Semiconductors;Mar2000, Vol. 34 Issue 3, p348 

    The influence of the technological parameters of deposition, the purity and relative concentration of diborane, and the substrate temperature on electrical parameters of (a-Si:H):B films obtained by high-frequency decomposition of a gaseous mixture in a multielectrode system was studied....

  • Substrate doping effects on Raman spectrum of epitaxial graphene on SiC. Yang, R.; Huang, Q. S.; Chen, X. L.; Zhang, G. Y.; Gao, H.-J. // Journal of Applied Physics;Feb2010, Vol. 107 Issue 3, p034305 

    In this paper, we reported a Raman scattering study of epitaxial graphene on different doped 6H-SiC (0001) substrates and investigated the substrate induced charge-transfer doping to the epitaxial graphene. We found that the charge carrier type and concentration of epitaxial graphene can be...

  • Inert gas jets for growth control in electron beam induced deposition. Henry, M. R.; Kim, S.; Rykaczewski, K.; Fedorov, A. G. // Applied Physics Letters;6/27/2011, Vol. 98 Issue 26, p263109 

    An inert, precursor free, argon jet is used to control the growth rate of electron beam induced deposition. Adjustment of the jet kinetic energy/inlet temperature can selectively increase surface diffusion to greatly enhance the deposition rate or deplete the surface precursor due to...

  • Resonant Raman scattering and photoluminescence at the E[sub 0] band gap of carbon-doped AlAs. Wagner, J.; Fischer, A.; Ploog, K. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3482 

    Investigates resonant Raman scattering and photoluminescence at the E[sub 0] band gap of carbon-doped aluminum arsenide (AlAs). Use of a heated graphite filament as a carbon source in obtaining doping levels; Observation of excitation above the AlAs E[sub o] band-gap energy radiative...

  • Back side Raman measurements on Ge/Pd/n-GaAs ohmic contact structures. Wuyts, K.; Watte, J.; Silverans, R.E.; Van Hove, M.; Borghs, G.; Palmstrom, C.J.; Florez, L.T.; Munder, H. // Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2406 

    Presents the Raman measurements on germanium/palladium/n-gallium arsenide (Ge/Pd/n-GaAs) ohmic contact structures. Enhancement of Ge doping of GaAs substrate surface layers; Use of back side thinning procedure for GaAs metallization; Presence of quasi-two-dimensional electron gas in the etched...

  • Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Cuscó, R.; Artús, L.; Ibán˜ez, J.; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6567 

    We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The...

  • Novel Bioactive Antimicrobial Lignin Containing Coatings on Titanium Obtained by Electrophoretic Deposition. Sanja Erakovic; Ana Jankovic; Gary C. P. Tsui; Chak-Yin Tang; Vesna Miskovic-Stankovic; Tatjana Stevanovic // International Journal of Molecular Sciences;Jul2014, Vol. 15 Issue 7, p12294 

    Hydroxyapatite (HAP) is the most suitable biocompatible material for bone implant coatings; its brittleness, however, is a major obstacle, and the reason why research focuses on creating composites with biopolymers. Organosolv lignin (Lig) is used for the production of composite coatings, and...

  • Photocatalytic mechanisms of modified titania under visible light. Yang, Ying; Zhong, Hui; Tian, Congxue // Research on Chemical Intermediates;Jan2011, Vol. 37 Issue 1, p91 

    Heterogeneous photocatalysis with titania under visible light has increasingly been a focus for research. Metal or non-metal doping, surface sensitization, semiconductor coupling, precious metal deposition and increasing crystal defects have been used to enhance the photocatalytic activity of...

  • Manufacturing of pure and doped silica and multicomponent glasses from SiO2 nanoparticles by reactive electrophoretic deposition. Tabellion, Jan; Zeiner, Johannes; Clasen, Rolf // Journal of Materials Science;Dec2006, Vol. 41 Issue 24, p8173 

    Manufacturing of glasses by shaping of powders and sintering comprises several advantages, like near-shaping of complex structures. Furthermore, sintering to fully transparent glasses is typically obtained at temperatures significantly lower than via melt fabrication. Thus incorporation of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics