High efficiency mesoporous titanium oxide PbS quantum dot solar cells at low temperature

Tong Ju; Graham, Rebekah L.; Guangmei Zhai; Rodriguez, Yvonne W.; Breeze, Alison J.; Yang, Lily; Alers, Glenn B.; Carter, Sue A.
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p043106
Academic Journal
Efficient charge transport is demonstrated in TiO2/PbS quantum dot solar cells where the PbS absorber (∼1.1 eV band gap) is deposited by dip coating and ethanedithiol ligand exchange, with power efficiencies above 3% at AM1.5. An increase in power efficiency occurs as the device temperature is lowered to 170 K, with a open-circuit voltage of 0.66 V, short-circuit current density of 28.6 mA/cm2 and fill factor of 42.4%. This remarkable temperature dependence is due to a large increase in charge transport between the PbS quantum dots with decreasing temperature.


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