TITLE

Strong circular photogalvanic effect in ZnO epitaxial films

AUTHOR(S)
Zhang, Q.; Wang, X. Q.; Yin, C. M.; Xu, F. J.; Tang, N.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.; Ishitani, Y.; Yoshikawa, A.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p041907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.
ACCESSION #
52616454

 

Related Articles

  • Strong circular photogalvanic effect in ZnO epitaxial films. Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p703 

    A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not...

  • Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction. Mridha, S.; Basak, D. // Journal of Applied Physics;4/15/2007, Vol. 101 Issue 8, p083102 

    A n-ZnO/p-Si thin film heterojunction has been fabricated by a low cost sol-gel technique. The wavelength dependent photoresponse properties of the heterojunction is investigated in detail by studying the effect of light illumination on current-voltage (I-V) characteristics, photocurrent, and...

  • Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN. Rogers, D. J.; Hosseini Teherani, F.; Ougazzaden, A.; Gautier, S.; Divay, L.; Lusson, A.; Durand, O.; Wyczisk, F.; Garry, G.; Monteiro, T.; Correira, M. R.; Peres, M.; Neves, A.; McGrouther, D.; Chapman, J. N.; Razeghi, M. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p071120 

    Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work,...

  • Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers. Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi; Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p081915 

    The authors have grown nonpolar AlN layers on m-plane ZnO substrates using pulsed laser deposition and investigated their structural properties. The direct growth of AlN on ZnO substrates at 750 °C results in the formation of polycrystalline materials due to significant interfacial reactions...

  • Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO/SiO2 thin films on top of the p-GaN heterostructure. Chen, Cheng Pin; Ke, Min Yung; Liu, Chien Cheng; Chang, Yuan Jen; Yang, Fu Hsiang; Huang, Jian Jang // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p091107 

    The authors report on the 394 nm UV light emission from low-temperature sputtered n-ZnO/SiO2 thin films on top of the p-GaN heterostructure. They compare samples with and without a SiO2 current blocking layer. With a SiO2 layer, electroluminescence spectrum shows a sharp emission peak at 394 nm,...

  • Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films. Ghosh, R.; Basak, D.; Fujihara, S. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2689 

    The effect of substrate-induced strain in polycrystalline ZnO thin films on different substrate, e.g., GaN epilayer, sapphire (0001), quartz glass, Si(111)/SiO2, and glass deposited by sol-gel process, has been investigated by x-ray diffraction, scanning electron microscope, electrical...

  • Growth optimization and structural analysis for ferromagnetic Mn-doped ZnO layers deposited by radio frequency magnetron sputtering. Abouzaid, M.; Ruterana, P.; Liu, C.; Morkoç, H. // Journal of Applied Physics;6/1/2006, Vol. 99 Issue 11, p113515 

    The article reports on a study of the effect of the deposition temperature on the crystalline quality of ferromagnetic Mn-doped ZnO layers in thin films prepared by radio frequency magnetron sputtering on GaN substrates and c-plane sapphire. At high manganese concentration the columnar structure...

  • Transparent conducting ZnO nanorods for nanoelectrodes as a reverse tunnel junction of GaN light emitting diode applications. Jin An, Sung // Applied Physics Letters;5/28/2012, Vol. 100 Issue 22, p223115 

    We demonstrated transparent vertical aligned ZnO nanorod arrays for nanoelectrodes as a reverse-tunnel junction of GaN LEDs. GaN LEDs with ZnO nanorod arrays for nanoelectrodes demonstrated three times enhanced light output power compared with that of GaN LEDs with tunnel junction ZnO thin film,...

  • Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN. Baik, Kwang Hyeon; Kim, Hyonwoong; Kim, Jihyun; Jung, Sukkoo; Jang, Soohwan // Applied Physics Letters;8/26/2013, Vol. 103 Issue 9, p091107 

    Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane ([formula]) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 °C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics