Optimizing transistor performance of percolating carbon nanotube networks

Sangwan, V. K.; Behnam, A.; Ballarotto, V. W.; Fuhrer, M. S.; Ural, Ant; Williams, E. D.
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p043111
Academic Journal
In percolating networks of mixed metallic and semiconducting carbon nanotubes (CNTs), there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks). Experiments on transistors and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel length (L) for CNT density (p) between 0.04 and 1.29 CNTs/μm2 in the on- and off-states (nanotube root mean square length of 5 μm). Optimized devices with field-effect mobility up to 50 cm2/V s at on/off ratio >103 were obtained at channel width W=50 μm and L>70 μm for p=0.54–0.81 CNTs/μm2.


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