Temperature stability of intersubband transitions in AlN/GaN quantum wells

Berland, Kristian; Stattin, Martin; Farivar, Rashid; Sultan, D. M. S.; Hyldgaard, Per; Larsson, Anders; Shu Min Wang; Andersson, Thorvald G.
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p043507
Academic Journal
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to 400 °C. The self-consistent Schrödinger–Poisson modeling includes temperature effects of the band gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by ∼6 meV at 400 °C relative to its room temperature value.


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