TITLE

Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates

AUTHOR(S)
Li, X. M.; Zhao, K.; Ni, H.; Zhao, S. Q.; Xiang, W. F.; Lu, Z. Q.; Yue, Z. J.; Wang, F.; Kong, Yu-Chau; Wong, H. K.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p044104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the voltage tunable photodetecting properties of a La0.4Ca0.6MnO3 film grown on miscut LaSrAlO4 (001) substrates under ultraviolet pulsed laser irradiation at ambient temperature. The photovoltage and photocurrent peak sensitivities can be tuned in the range of 0.295–0.786 V/mJ and 0.172–0.314 A/mJ, respectively, when the applied bias is changed from -20 to +20 V, indicating that the vicinal manganite film can be used as an electric tunable ultraviolet photodetector. A possible mechanism based on the high resolution transmission electron microscopy is introduced to explain the experiment results.
ACCESSION #
52616423

 

Related Articles

  • Growth, Structural and Optical Characterization of ZnO Nanotubes on Disposable-Flexible Paper Substrates by Low-Temperature Chemical Method. Soomro, M. Y.; Hussain, I.; Bano, N.; Jun Lu; Hultman, L.; Nur, O.; Willander, M. // Journal of Nanotechnology;2012, p1 

    We report the synthesis of vertically aligned ZnO nanotubes (NTs) on paper substrates by low-temperature hydrothermal method. The growth of ZnO NTs on the paper substrate is discussed; further, the structural and optical properties are investigated by scanning electron microscope (SEM),...

  • Ultraviolet laser diodes grown on semipolar [formula] GaN substrates by plasma-assisted molecular beam epitaxy. Sawicka, M.; Muziol, G.; Turski, H.; Grzanka, S.; Grzanka, E.; Smalc-Koziorowska, J.; Weyher, J. L.; Chèze, C.; Albrecht, M.; Kucharski, R.; Perlin, P.; Skierbiszewski, C. // Applied Physics Letters;6/24/2013, Vol. 102 Issue 25, p251101 

    We demonstrate ultra-violet laser diodes emitting at 388 nm grown by plasma-assisted molecular beam epitaxy on semipolar [formula]GaN substrates under metal-rich conditions. The threshold current density and voltage of 13.2 kA/cm2 and 10.8 V were measured at room temperature for devices with the...

  • Transmission Electron Microscopy of Interfaces in Diffusion-Bonded Silicon Carbide Ceramics. Tsuda, Hiroshi; Mori, Shigeo; Halbig, Michael C.; Singh, Mrityunjay; Asthana, Rajiv // Advances in Science & Technology;2014, Vol. 88, p139 

    Diffusion bonding was used to join silicon carbide (SiC) to SiC substrates using three kinds of interlayers: physical-vapor-deposited (PVD) Ti coatings (10 and 20 μm) on the substrate, Ti foils (10 and 20 μm), and a Mo-B foil (25 μm). Two types of substrates were used:...

  • Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC. Borysiuk, J.; Bożek, R.; Grodecki, K.; Wysmołek, A.; Strupiński, W.; Stępniewski, R.; Baranowski, J. M. // Journal of Applied Physics;Jul2010, Vol. 108 Issue 1, p013518 

    Transmission electron microscopy (TEM) investigations of epitaxial graphene, grown on on-axis and 8° off-axis C-terminated 4H–SiC [formula] surfaces are presented. The TEM results provide evidence that the first carbon layer is separated by 3.2 Å from the C-terminated SiC surface....

  • Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si. Yong Wang; Jin Zou; Zuoming Zhao; Xinhai Han; Xiaoyu Zhou; Wang, Kang L. // Journal of Applied Physics;Mar2008, Vol. 103 Issue 6, p066104 

    Mn behaviors in the Ge0.96Mn0.04 thin films grown on Si (001) substrates by molecular beam epitaxy were investigated by high resolution transmission electron microscopy, electron energy loss spectroscopy, and energy dispersive spectroscopy. Unlike the previously reported case of GeMn thin films...

  • New sampling technique for collection of nanoparticles from liquids. Ratoi, Monica; Crossley, Alison; Dobson, Peter // Journal of Nanoparticle Research;Jun2013, Vol. 15 Issue 6, p1 

    Transmission electron microscopy (TEM) is the only technique which can give accurate information on the individual size, shape and composition of NPs. However, in dilute forms it is difficult to collect a sufficient number of NPs on an electron microscope grid for TEM analysis without some means...

  • On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates. Vennéguès, P.; Chauveau, J. M.; Bougrioua, Z.; Zhu, T.; Martin, D.; Grandjean, N. // Journal of Applied Physics;Dec2012, Vol. 112 Issue 11, p113518 

    The microstructure of nonpolar heteroepitaxial wurtzite films (GaN and ZnO-based) is dominated by the presence of planar basal stacking faults (BSFs). In this paper, transmission electron microscopy studies of both GaN and ZnO nonpolar films oriented either (11-20) or (1-100) and grown on...

  • Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200MeV Ag14+ ions. Kumar, Ashish; Kumar, Tanuj; Hähnel, A.; Kanjilal, D.; Singh, R. // Applied Physics Letters;1/20/2014, Vol. 104 Issue 3, p033507-1 

    Ni/GaN Schottky barrier diodes were irradiated with 200 MeV Ag ions up to fluence of 1×1011 ions/cm2 at the substrate temperature of 80 K. Post-irradiation current-voltage measurements showed that the ideality factor, n increased and the reverse leakage current, IR decreased with increase in...

  • Interface-mediated amorphization of coesite by 200 keV electron irradiation. Gong, W.L.; Wang, L.M. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2570 

    Studies electron-induced amorphization of coesite as a function of irradiation temperature by in situ transmission electron microscopy at an incident energy of 200 keV. Use of ionization mechanism in inducing electron-induced amorphization of the coesite; Nucleation of the liquid.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics