Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance

Umeda, T.; Isoya, J.; Ohshima, T.; Onoda, S.; Morishita, N.; Okonogi, K.; Shiratake, S.
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p041911
Academic Journal
An electron paramagnetic resonance (EPR) study on fluorine-vacancy defects (FnVm) in fluorine-implanted silicon is demonstrated. Fluorine implantation is an important technology for Si microdevices and EPR measurements showed that this process created a variety of FnVm defects of different sizes (V2, V4, and V5). In FnVm, a Si–F bond exhibited a different chemical nature compared to a Si–H bond in hydrogen-vacancy complexes. The most primitive defect was FV2 (F0 center) and the final types were FnV5 (F1 center) and FnV2 (F2 center) which increased in annealing processes as low temperature as 200 °C.


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