TITLE

Observation of the forbidden doublet optical phonon in Raman spectra of strained Si for stress analysis

AUTHOR(S)
Poborchii, Vladimir; Tada, Tetsuya; Kanayama, Toshihiko
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p041915
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using high numerical aperture lenses, we detected doublet optical phonon, forbidden by selection rules, in Raman spectra of Si strained in the (001) plane (bulk Si as well as strained Si device structure grown on SiGe). This allowed us to quantitatively determine stress and its distribution in strained Si with the ∼10% accuracy, assuming symmetric biaxial stress. At the same time, we demonstrate some deviations of the real stress from the assumed model. For better accuracy, one has to consider these deviations as well as a possibility of improvement of available Si phonon deformation potential values.
ACCESSION #
52616417

 

Related Articles

  • Determining phonon deformation potentials of hexagonal GaN with stress modulation. Jun-Yong Lu; Zhi-Jia Wang; Dong-Mei Deng; Yong Wang; Kevin Jing Chen; Kei-May Lau; Tong-Yi Zhang // Journal of Applied Physics;Dec2010, Vol. 108 Issue 12, p123520 

    In this work, phonon deformation potentials for E2H and A1(LO) phonons of epitaxial hexagonal GaN thin films grown by metalorganic chemical vapor deposition on Si (111) substrate were precisely determined with a stress modulation method, which was achieved via coin-shaped patterning of an...

  • Raman spectra of epitaxial graphene on SiC(0001). Röhrl, J.; Hundhausen, M.; Emtsev, K. V.; Seyller, Th.; Graupner, R.; Ley, L. // Applied Physics Letters;5/19/2008, Vol. 92 Issue 20, p201918 

    We present Raman spectra of epitaxial graphene layers grown on [formula] reconstructed silicon carbide surfaces during annealing at elevated temperature. In contrast to exfoliated graphene a significant phonon hardening is observed. We ascribe that phonon hardening to a minor part to the known...

  • Investigation of the Stress-strain State in the Deformation Zone of the Wire Depending on the Angle of the Die. Radionova, L. V.; Ivanov, V. A.; Shatalov, V. S. // Russian Internet Journal of Industrial Engineering;2014, Issue 2, p21 

    The paper presents the study as a result of establishing that the die angle reduction does not entail negative effects on the stress-strain state of the wire. It was established that the maximum stress-effective remain practically unchanged while changing the angle dies. When we reduce the angle...

  • Nonlinear stress-strain relations for crystalline solids in initially deformed state. Wang, Hao; Li, Mo // Journal of Applied Physics;Nov2012, Vol. 112 Issue 9, p093501 

    We show a general nonlinear stress-strain response for crystalline materials subject to an initial deformation. The scheme is implemented using 3rd, 4th, and higher order elastic constants. We apply the formulation to a face-centered cubic crystalline Au under shear while in an initially...

  • Kinematic evolution of the Middle Jurassic Samana Suk Formation, Hazara Division, Khyber Pakhtunkhwa, Pakistan. Ali, Asghar; Hussain, Mushtaq; Ali, Sajid; Hussain, Shahid; Ali, Wajid // Journal of Himalayan Earth Science;2012, Vol. 45 Issue 2, p17 

    Penetrative finite strain was calculated for the Middle Jurassic Samana Suk Formation exposed along the Abbottabad-Nathiagali road section using elliptical ooids as passive strain markers. Strain analyses of deformed ooids using the Fry and Rf/Phi methods constrain the kinematic evolution of...

  • Anharmonicity of Short-Wavelength Acoustic Phonons in Silicon at High Temperatures. Brazhkin, V. V.; Lyapin, S. G.; Trojan, I. A.; Voloshin, R. N.; Lyapin, A. G.; Mel�nik, N. N. // JETP Letters;8/25/2000, Vol. 72 Issue 4, p195 

    Second-order Raman spectra corresponding to transverse acoustic phonons are studied in detail for crystalline Si over the temperature range 20-620�C. The largest relative softening and anharmonicity at the boundaries of the Brillouin zone were observed for the TA(X) mode. Extrapolation of...

  • Visible and ultraviolet Raman scattering studies of Si...Ge... alloys. Holtz[a], M.; Duncan, W. M.; Zollner, S.; Liu, R. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2523 

    Reports on Raman studies of the Si-Si phonon band in Si(sub1-x)Ge(sub x) alloys, where the excitation is by visible and ultraviolet light. Optical penetration depth at a wavelength of 351 nanometer; Production of a spectrum in by visible excitation in thin, strained layers; Isolation of the...

  • Raman scattering from anisotropic LO-phonon–plasmon–coupled mode in n-type 4H– and 6H–SiC. Harima, Hiroshi; Nakashima, Shin-ichi; Uemura, Tomoki // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1996 

    Examines the LO-phonon-plasmon-coupled modes in n-type hydrogen-silicon carbide single crystals. Use of Raman scattering at room temperature; Overview of the plasmon frequency, carrier damping and phonon damping; Longitudinal and transverse effective mass components of the electron.

  • Raman scattering analysis of relaxed Ge[sub x]Si[sub 1--x] alloy layers. Mooney, P.M.; Dacol, F.H.; Tsang, J.C.; Chu, J.O. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2069 

    Examines the relaxed Ge[sub x]Si[sub 1-x] alloy layers. Evaluation of thick epitaxial Ge[sub x]Si[sub 1-x] layers grown on silicon substrates; Dependencies of the relative intensities of phonon mode varieties; Enhancement of the sensitivity of Raman scattering.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics