TITLE

Oxygen vacancy estimation of high k metal gate using thermal dynamic model

AUTHOR(S)
Chang, H. L.; Liang, M. S.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p041912
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Oxygen vacancies are electronic defects in materials. In a metal oxide system, the distribution of such vacancies is determined by the oxygen affinity. This study predicts the oxygen vacancy concentration in a high-k/metal gate system using a developed thermal dynamic model. A system with Ti:N=2 has a 200 mV lower flat band voltage than an N rich metal. The Gibbs free energy of formation of oxygen vacancies, ∼0.5 eV, is derived from flab band voltage shifts and created neutral oxygen vacancy. The oxygen vacancy model based on estimating thermal dynamics is proposed.
ACCESSION #
52616414

 

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