In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy

Kawaguchi, T.; Uemura, H.; Ohno, T.; Tabuchi, M.; Ujihara, T.; Takenaka, K.; Takeda, Y.; Ikuta, H.
July 2010
Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p042509
Academic Journal
Superconducting NdFeAs(O,F) thin films were grown on GaAs substrates by molecular beam epitaxy. Films grown with a sufficiently long growth time exhibited a clear superconducting transition with an onset temperature up to 48 K and zero resistance temperature up to 42 K without the need of an ex situ annealing process. Electron probe microanalysis and Hall coefficient measurements indicated that the superconducting films are doped with fluorine, and depth-profile analysis by Auger electron spectroscopy revealed the formation of a NdOF layer near the surface, which is probably connected with the fluorine doping.


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