TITLE

Terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots

AUTHOR(S)
Bhattacharyya, J.; Wagner, M.; Helm, M.; Hopkinson, M.; Wilson, L. R.; Schneider, H.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p031101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optical properties and interdot transfer dynamics of trapped carriers in InGaAs quantum dots (QDs) are investigated. Time resolved photoluminescence (PL) was measured for time-delayed interband and intraband excitations. Terahertz activated luminescence (TAL) from trapped carriers having lifetimes of ∼250 ns at 8 K, was observed. Spectral shift of the TAL with respect to the PL showed the trionic nature of the PL in the n-doped QDs. With increasing terahertz excitation intensity, the TAL increased and reached saturation. The activation energy associated with the trapped carrier decay was quite close to the intersublevel transition energy (∼20 meV) indicating trapping in the QDs.
ACCESSION #
52479451

 

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