TITLE

High peak power λ∼3.3 and 3.5 μm InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K

AUTHOR(S)
Commin, J. P.; Revin, D. G.; Zhang, S. Y.; Krysa, A. B.; Kennedy, K.; Cockburn, J. W.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p031108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate λ∼3.5 μm and λ∼3.3 μm strain compensated In0.7Ga0.3As/AlAs(Sb)/InP quantum cascade lasers operating in pulse regime at temperatures up to at least 400 K. Peak optical power exceeding 3.5 W at 300 K has been achieved at both wavelengths for 10 μm wide 4 mm long lasers with high reflectivity coated back facets. Threshold current densities of 2.5 kA/cm2 and 3.5 kA/cm2 have been observed at 300 K for the devices emitting at λ∼3.5 μm and λ∼3.3 μm, respectively.
ACCESSION #
52479429

 

Related Articles

  • Optical phase shift induced by intersubband transitions in multiple quantum well structures. Załużny, M.; Nalewajko, C. // Journal of Applied Physics;1/15/2006, Vol. 99 Issue 2, p026104 

    We discuss, theoretically, employing formalism based on the transfer matrix method and the so-called sheet model, the linear and nonlinear (saturated) optical phase shifts associated with intersubband transitions in multiple quantum well (MQW) structures. A commonly used total internal...

  • Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%–32%. Kudrawiec, R.; Yuen, H. B.; Motyka, M.; Gladysiewicz, M.; Misiewicz, J.; Bank, S. R.; Bae, H. P.; Wistey, M. A.; Harris, James S. // Journal of Applied Physics;1/1/2007, Vol. 101 Issue 1, p013504 

    Interband transitions in GaInNAsSb/GaAs single quantum wells (SQWs) with nominally identical nitrogen and antimony concentrations (2.5% N and 7% Sb) and varying indium concentrations (from 8% to 32%) have been investigated by contactless electroreflectance (CER). CER features related to optical...

  • High contrast, submilliwatt power InGaAs/GaAs strained-layer multiple-quantum-well asymmetric.... Jin, R.; Khitrova, G.; Gibbs, H.M.; Lowry, C.; Peyghambarian, N. // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3216 

    Demonstrates the low power optical reflection modulator with an InGaAs and GaAs strained-layer multiple quantum well nonlinear spacer. Structure of the modulator; Effect of absorption saturation and index change; Advantage of the combined use of dispersive and absorptive nonlinearities.

  • Large-signal coherent control of normal modes in quantum-well semiconductor microcavity. Lee, Y.-S.; Norris, T. B.; Maslov, A.; Citrin, D. S.; Prineas, J.; Khitrova, G.; Gibbs, H. M. // Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3941 

    We demonstrate coherent control of the cavity-polariton modes of a quantum-well semiconductor microcavity in a two-color scheme. The cavity enhancement of the excitonic nonlinearity gives rise to a large signal; modulating the relative phase of the excitation pulses between zero and π...

  • Non-uniform carrier distribution in multi-quantum-well lasers. Smowton, P. M.; Lewis, G. M.; Sobiesierski, A.; Blood, P.; Lutti, J.; Osbourne, S. // Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p419 

    We describe an approach to detect the presence of a nonuniform distribution of carriers between the different wells of multi-quantum-well laser diodes by measuring the gain and spontaneous emission spectra and demonstrate its application to a five-well sample that has a nonuniform carrier...

  • Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions. Revin, D. G.; Cockburn, J. W.; Steer, M. J.; Airey, R. J.; Hopkinson, M.; Krysa, A. B.; Wilson, L. R.; Menzel, S. // Applied Physics Letters;7/30/2007, Vol. 91 Issue 5, p051123 

    The authors demonstrate that the performance of strain compensated InP-based InGaAs/AlAsSb quantum cascade lasers (QCLs) can be improved if AlAsSb barriers in the laser active regions are replaced by AlAs layers. The introduction of AlAs is intended to help suppress compositional fluctuations...

  • All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3.... Krol, M.F.; Ohtsuki, T.; Khitrova, G.; Boncek, R.K.; McGinnis, B.P.; Gibbs, H.M.; Peyghambarian, N. // Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1550 

    Demonstrates high contrast GaAlIn/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 micrometer. Measurement of the modulator operating speed; Avoidance of probe induced saturation effects; Calculation of the multilayer reflectance.

  • Spectral engineering with defect multiple-quantum-well structures. Deych, L. I.; Erementchouk, M. V.; Lisyansky, A. A. // Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4562 

    It is shown that it is possible to significantly modify optical spectra of Bragg multiple-quantum-well structures by introducing wells with different exciton energies. The reflection spectrum of the resulting structures is characterized by high contrast and tuning possibilities. © 2003...

  • Optically addressed asymmetric Fabry-Perot modulator. Larsson, A.; Maserjian, J. // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3099 

    Details the construction of a modulator operating in a reflection mode. Insertion of a multiple quantum well structure in an asymmetric Fabry-Perot resonator; Measurement of the contrast ratio; Determination of the insertion loss.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics