High peak power λ∼3.3 and 3.5 μm InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K

Commin, J. P.; Revin, D. G.; Zhang, S. Y.; Krysa, A. B.; Kennedy, K.; Cockburn, J. W.
July 2010
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p031108
Academic Journal
We demonstrate λ∼3.5 μm and λ∼3.3 μm strain compensated In0.7Ga0.3As/AlAs(Sb)/InP quantum cascade lasers operating in pulse regime at temperatures up to at least 400 K. Peak optical power exceeding 3.5 W at 300 K has been achieved at both wavelengths for 10 μm wide 4 mm long lasers with high reflectivity coated back facets. Threshold current densities of 2.5 kA/cm2 and 3.5 kA/cm2 have been observed at 300 K for the devices emitting at λ∼3.5 μm and λ∼3.3 μm, respectively.


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