TITLE

Reflection high-energy electron diffraction [lowercase_phi_synonym] scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy

AUTHOR(S)
Gao, Cunxu; Schönherr, Hans-Peter; Brandt, Oliver
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p031906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The heteroepitaxial growth of Fe films on GaN(0001) by molecular beam epitaxy is monitored in situ by reflection high-energy electron diffraction [lowercase_phi_synonym] scans. The complex epitaxial orientation-relationship between Fe and GaN can be visualized by these [lowercase_phi_synonym] scans already at an Fe coverage of two monolayers. By comparing the data to ex situ x-ray [lowercase_phi_synonym] scans, we show that these measurements even allow a quantitative determination of the in-plane orientation-distribution of the heteroepitaxial film. The orientation-distribution is minimized for a growth temperature of 350 °C.
ACCESSION #
52479424

 

Related Articles

  • Bilayer reflection-high-energy-electron-diffraction intensity oscillations observed during.... Ohtani, N.; Mokler, S.M. // Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1399 

    Observes the bilayer reflection-high-energy-electron diffraction (RHEED) intensity oscillations on silicon substrate grown by silicon gas-source molecular beam epitaxy. Observation of bilayer-mode oscillation in the azimuth; Transformation of oscillations from monolayer waveform to bilayer...

  • Growth of Al on GaAs(001): Observation of interfacial submonolayer structure. Donner, S. K.; Blumenthal, Rik; Herman, J. L.; Trehan, Rajender; Furman, Ehud; Winograd, Nicholas // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1753 

    Submonolayer structure has been observed using reflection high-energy electron diffraction during room-temperature deposition of Al onto (2×4) reconstructed GaAs(001) surfaces prepared by molecular beam epitaxy. This structure with a (4×1) symmetry occurs after ∼0.25 monolayer of Al...

  • Molecular beam epitaxy of InSb (110). Bosch, A. J.; van Welzenis, R. G.; Schannen, O. F. Z. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3434 

    Presents information on a study that reported molecular beam homoepitaxy of InSb on the nonpolar face for the first time. Methodology of the study; Results of the study; Conclusions.

  • A cantilever shadow mask technique for reduced area molecular beam epitaxial growth. Beam III, E. A.; Kao, Y. C. // Applied Physics Letters;1/14/1991, Vol. 58 Issue 2, p152 

    Studies the application of cantilever shadow masking, a type of shadow mask growth technique, for reduced area molecular beam epitaxial growth. Effects of the elimination of sidewall growth interactions; Use of the technique in defect density reduction during latticed-mismatched heteroepitaxy...

  • Combined Rayleigh and Raman scattering study of AlxGa1-xAs grown via molecular beam epitaxy under reflection high-energy electron diffraction determined growth conditions. Tang, W. C.; Lao, P. D.; Madhukar, A.; Cho, N. M. // Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p42 

    Rayleigh and Raman scattering studies reveal a direct correlation between the degree of disorder and growth kinetics attendant to the chosen growth conditions in molecular beam epitaxial growth. This inference is derived from studies on AlxGa1-xAs alloys grown under growth conditions indicated...

  • Transient atomic behavior and surface kinetics of GaN. Moseley, Michael; Billingsley, Daniel; Henderson, Walter; Trybus, Elaissa; Doolittle, W. Alan // Journal of Applied Physics;Jul2009, Vol. 106 Issue 1, p14905 

    An in-depth model for the transient behavior of metal atoms adsorbed on the surface of GaN is developed. This model is developed by qualitatively analyzing transient reflection high energy electron diffraction (RHEED) signals, which were recorded for a variety of growth conditions of GaN grown...

  • Survival of atomic monolayer steps during oxide desorption on GaAs (100). Lee, J. H.; Wang, Zh. M.; Salamo, G. J. // Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p114330 

    Significant surface pitting and a degraded surface roughness are almost always observed on GaAs (100) surface after conventional thermal oxide desorption. Here we report on the use of a Ga-triggered low temperature oxide desorption method that can be used to preserve the atomic monolayer (ML)...

  • Layer-by-layer epitaxial growth of Mg on GaN(0001). Pezzagna, S.; Vézian, S.; Brault, J.; Massies, J. // Applied Physics Letters;6/9/2008, Vol. 92 Issue 23, p233111 

    It is shown that Mg deposition at room temperature on a GaN(0001) surface, obtained in situ by molecular beam epitaxy, gives rise to a layer-by-layer epitaxial growth mode. The study by reflection high-energy electron diffraction and scanning tunneling microscopy clearly evidences that a...

  • Improved crystalline properties of laser molecular beam epitaxy grown SrTiO3 by rutile TiO2 layer on hexagonal GaN. Luo, W. B.; Zhu, J.; Chen, H.; Wang, X. P.; Zhang, Y.; Li, Y. R. // Journal of Applied Physics;Nov2009, Vol. 106 Issue 10, p104120 

    Epitaxial SrTiO3 films were fabricated by laser molecular beam epitaxy on bare and TiO2 buffered GaN(0002), respectively. The whole deposition processes were in situ monitored by reflection high energy electron diffraction (RHEED). X-ray diffraction (XRD) was carried out to study the growth...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics