Reflection high-energy electron diffraction [lowercase_phi_synonym] scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy

Gao, Cunxu; Schönherr, Hans-Peter; Brandt, Oliver
July 2010
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p031906
Academic Journal
The heteroepitaxial growth of Fe films on GaN(0001) by molecular beam epitaxy is monitored in situ by reflection high-energy electron diffraction [lowercase_phi_synonym] scans. The complex epitaxial orientation-relationship between Fe and GaN can be visualized by these [lowercase_phi_synonym] scans already at an Fe coverage of two monolayers. By comparing the data to ex situ x-ray [lowercase_phi_synonym] scans, we show that these measurements even allow a quantitative determination of the in-plane orientation-distribution of the heteroepitaxial film. The orientation-distribution is minimized for a growth temperature of 350 °C.


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