Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization

Ovsyannikov, Sergey V.; Shchennikov, Vladimir V.; Karkin, Alexander E.; Polian, Alain; Briot, Olivier; Ruffenach, Sandra; Gil, Bernard; Moret, Matthieu
July 2010
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p032105
Academic Journal
Indium nitride was grown on Al2O3 substrate and characterized by x-ray diffraction, Raman, electrical resistivity, Hall, and magnetoresistance studies. Thermoelectric and electrical properties of free-standing films were measured in situ under high pressure (HP) cycling to 20 GPa, across a phase transformation to a rock-salt-structured lattice. HP-cycling-induced amorphization was established. The thermopower (Seebeck effect) data evidence that both crystalline and amorphous InN kept n-type conductivity to 20 GPa. Pressure effect on the carrier concentration and effective mass is analyzed. Two features that can be related to structural transitions in amorphous InN were found near 11 and 17 GPa.


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