Epitaxial growth and structure of (La1-xLux)2O3 alloys on Si(111)

Watahiki, T.; Grosse, F.; Braun, W.; Kaganer, V. M.; Proessdorf, A.; Trampert, A.; Riechert, H.
July 2010
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p031911
Academic Journal
LaLuO3 layers are epitaxially grown on Si(111) by molecular beam epitaxy using high temperature effusion sources. Samples are prepared by simultaneous as well as alternating growth of La2O3 and Lu2O3. Grazing incidence x-ray diffraction indicates that the resulting crystal structure of the alloys is cubic. Simultaneous and alternating growth with a monolayer period lead to the same distribution of La and Lu with no preferential ordering. In all cases the lattice mismatch to Si is less than 0.6%. The experimental results are analyzed by studying the energetics of hexagonal, bixbyite, and perovskite (La1-xLux)2O3 crystal structures employing density functional theory.


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