Rectification in three-terminal graphene junctions

Jacobsen, A.; Shorubalko, I.; Maag, L.; Sennhauser, U.; Ensslin, K.
July 2010
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p032110
Academic Journal
Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change in the rectification sign. At a bias <20 mV and at a temperature below 4.2 K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.


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