Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films

Hsu, H. S.; Chung, P. Y.; Zhang, J. H.; Sun, S. J.; Chou, H.; Su, H. C.; Lee, C. H.; Chen, J.; Huang, J. C. A.
July 2010
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p032503
Academic Journal
We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp2 states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field.


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