TITLE

Domain wall creep in (Ga,Mn)As

AUTHOR(S)
Kanda, A.; Suzuki, A.; Matsukura, F.; Ohno, H.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p032504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have compared the scaling exponents in scaling formula for magnetic domain wall creep by measuring the magnetic-field induced domain wall velocity of (Ga,Mn)As layers grown on (In,Al)As semistep-graded buffer layer and (In,Ga)As buffer layer. The different critical exponents for the two (Ga,Mn)As layers indicate that the observed creep motions belong to different universality classes, which are found to be governed by the degree of surface roughness due to crosshatch dislocation introduced during epitaxial growth. Domain wall creep motion in (Ga,Mn)As layer grown on (In,Al)As with flatter surface belongs to random-field disorder, whereas that in (In,Ga)As to random-bond disorder.
ACCESSION #
52479385

 

Related Articles

  • Properties of ferromagnetic film hysteresis, on the surface of a hard-magnetic antiferromagnet, with a domain structure. Kovalev, A. S.; Pankratova, M. L. // Low Temperature Physics;Nov2014, Vol. 40 Issue 11, p990 

    This is a theoretical investigation of the exchange bias phenomenon, and the properties of a thin magnetic film's magnetization hysteresis loop, on the rough surface of a hard-magnetic antiferro-magnet. An interface model with a periodic structure of atomic steps is presented. These atomic steps...

  • Statistical Physics of Fracture Surfaces Morphology. Bouchbinder, Eran; Procaccia, Itamar; Sela, Shani // Journal of Statistical Physics;Dec2006, Vol. 125 Issue 5/6, p1025 

    Experiments on fracture surface morphologies offer increasing amounts of data that can be analyzed using methods of statistical physics. One finds scaling exponents associated with correlation and structure functions, indicating a rich phenomenology of anomalous scaling. We argue that...

  • Measurement of roughness exponent for scale-invariant rough surfaces using angle resolved light.... Fang, K.; Adame, R. // Applied Physics Letters;4/17/1995, Vol. 66 Issue 16, p2077 

    Examines the use of angle resolve light scattering in measuring roughness exponent for scale-invariant rough surfaces. Techniques used in characterizing interfaces; Quantification of full-width-at-half-maximum (FWHM) of the diffuse intensity; Relationship of FWHM and lateral correlation length.

  • Effect of surface roughness on magnetic domain wall thickness, domain size, and coercivity. Zhao, Y.-P.; Gamache, R. M.; Wang, G.-C.; Lu, T.-M.; Palasantzas, G.; De Hosson, J. Th. M. // Journal of Applied Physics;1/15/2001, Vol. 89 Issue 2, p1325 

    We study the effect of surface roughness on magnetic domain wall thickness, domain size, and coercivity of thin magnetic films. We show that the roughness increases (decreases) the domain wall thickness and domain size for Bloch walls (Néel walls). The surface roughness affects the domain...

  • Tunable surface anisotropy of synthetic antiferromagnetic free layer. Jui-Hang Chang; Ching-Ray Chang // Journal of Applied Physics;2014, Vol. 116 Issue 1, p013902-1 

    We have studied the magnetostatic energies of three different kinds of ferromagnetic trilayer structures in which a nonmagnetic spacer inserts. It is shown that the surface roughness results in an additional effective perpendicular anisotropy. In the continuous and hybrid multilayer structures,...

  • X-ray scattering from magnetic, rough surfaces. Osgood III, R.M.; Sinha, S.K. // Journal of Applied Physics;4/15/1999 Part 2A of 2, Vol. 85 Issue 8, p4619 

    Presents expressions for the resonant magnetic x-ray scattering from rough surfaces. Analysis of the structural and magnetic roughnesses; Correlation between them; Effects of magnetic domain structure and magnetic dead layers on the surface scattering.

  • Ga kinetics in plasma-assisted molecular-beam epitaxy of [formula]: Effect on the structural and optical properties. Lahourcade, L.; Renard, J.; Gayral, B.; Monroy, E.; Chauvat, M. P.; Ruterana, P. // Journal of Applied Physics;May2008, Vol. 103 Issue 9, p093514 

    GaN directly deposited on m-sapphire by plasma-assisted molecular-beam epitaxy settles into two main crystalline orientation domains: GaN(1122) and GaN{1013}. The dominant phase is GaN(1122) with...

  • Computer simulation of ferroelectric domain structures in epitaxial BiFeO3 thin films. Zhang, J. X.; Li, Y. L.; Choudhury, S.; Chen, L. Q.; Chu, Y. H.; Zavaliche, F.; Cruz, M. P.; Ramesh, R.; Jia, Q. X. // Journal of Applied Physics;May2008, Vol. 103 Issue 9, p094111 

    Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFeO3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain...

  • Scaling Behavior of Gravel Surfaces. Qin, Jie; Zhong, Deyu; Ng, Sai; Wang, Guangqian // Mathematical Geosciences;Jul2012, Vol. 44 Issue 5, p583 

    Roughness of successively developed gravel surfaces in flume experiments is investigated using laser scanned elevation fields. Scaling behavior of these surfaces is studied using structure functions. The results show that all surfaces exhibit good scaling behavior for two scaling regions....

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics