Direct optical probing of negative carriers from an operating [6,6]-phenyl C61 butyric acid methyl ester diode

Kanemoto, Katsuichi; Ogata, Akihiko; Inoue, Nobuyuki; Kusumoto, Toshiyuki; Hashimoto, Hideki; Akai, Ichiro; Karasawa, Tsutomu
July 2010
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p033307
Academic Journal
We have performed spectroscopic measurements combining with the diode operation of [6,6]-phenyl C61 butyric acid methyl ester (PCBM) for directly characterizing the nature of its n-carriers. The measurements in the visible region reveal that electrons for the n-carrier generation are primarily accommodated into the t1g and t1u levels. The measurements in the near-infrared region indicate that the n-carriers of the PCBM diode are delocalized compared to the PCBM anions in solution. We also show that the frequency-dependence of the spectroscopic signals can estimate the lifetime of the n-carriers in the PCBM diode (23 μs).


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