Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Xu, Y.; Minari, T.; Tsukagoshi, K.; Gwoziecki, R.; Coppard, R.; Balestra, F.; Chroboczek, J. A.; Ghibaudo, G.
July 2010
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p033503
Academic Journal
The power spectral density of low-frequency noise in contact resistance, SRsd, of organic transistors is evaluated by the transfer-line method. The obtained gate-voltage dependent SRsd is then normalized by the square of contact resistance, which is extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant SRsd/Rsd2 with respect to gate voltage are obtained in the range 10-7–10-6 μm/Hz at 20 Hz in p-type and n-type devices, respectively. This method proves suitable to investigate separately the origin of the noise sources in channel as well as in contact region.


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