TITLE

Method to calculate electric fields at very small tip-sample distances in atomic force microscopy

AUTHOR(S)
Sacha, G. M.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p033115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A method to calculate electric magnitudes at very small tip-sample distances in atomic force microscopy is presented. We show that the method accurately calculates the electrostatic potential and vertical force for electrostatic force microscopy geometries that cannot be correctly simulated by the standard techniques. This technique can accurately calculate tip-sample distances four orders of magnitude smaller than the tip radius. We also demonstrate that, at this range, traditional techniques underestimate the electrostatic force in almost 30%. Finally, we calculate the jump-to-contact distance for geometries obtained from experiments that combine atomic force microscopy and scanning tunneling microscopy.
ACCESSION #
52479349

 

Related Articles

  • Field induced oxidation of silicon by SPM: study of the mechanism at negative sample voltage by STM, ESTM and AFM. Abadal, G.; Pérez-Murano, F.; Barniol, N.; Aymerich, X. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS791 

    Abstract. Nanometer scale oxidation of silicon surfaces by STM and AFM is an important subject in the SPM community, and its application for nanofabrication has been demonstrated by several groups. Most published work show that the surface can only be oxidized if a positive sample voltage is...

  • Comparison of dynamic lever STM and noncontact AFM. Guggisberg, M.; Bammerlin, M.; Lüthi, R.; Loppacher, C.; Battiston, F.; Lü, J.; Baratoff, A.; Meyer, E.; Güntherodt, H.-J. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS245 

    Abstract. We investigate interaction effects which occur in scanning tunneling microscopy (STM) by performing local force spectroscopy with an oscillating tip while imaging Si(111)7 x 7 terraces in the dynamic lever STM mode (constant time-averaged current). It is found that true atomic...

  • Lattice disorder and density of states change of graphite surface by single ion impact. Ogiso, H.; Mizutani, W.; Nakano, S.; Tokumoto, H.; Yamanaka, K. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS1155 

    Abstract. We discuss changes in the electronic structure and the topography of the graphite surface caused by a single ion impact. Both protrusion-like regions (PLR) and the lattice-disordered regions were found in scanning tunneling microscope images. In atomic force images, however, no PLRs...

  • Atomic point-contact imaging. Smith, D. P. E.; Binnig, G.; Quate, C. F. // Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1166 

    In tunneling microscopy a potential barrier separates a pointed tip from the sample to be investigated. In this letter we show that atomic resolution can be achieved in special cases where the gap spacing has been reduced to the point where the potential barrier may have completely collapsed. In...

  • An integrated scanning tunneling, atomic force and lateral force microscope. Wenzler, L. A.; Han, T.; Bryner, R. S.; Beebe, T. P. // Review of Scientific Instruments;Jan1994, Vol. 65 Issue 1, p85 

    We describe the design and operation of a combined scanning tunneling–atomic force–lateral force microscope [(STM), (AFM), (LFM)]. Including these capabilities in a single instrument reduces construction costs and increases flexibility. AFM and LFM may be performed simultaneously;...

  • A novel AFM/STM/SEM system. Ermakov, A. V.; Garfunkel, E. L. // Review of Scientific Instruments;Sep94, Vol. 65 Issue 9, p2853 

    An atomic force/scanning tunneling (AFM/STM) microscope intended for operation inside a scanning electron microscope (SEM) is described. This AFM/STM/SEM system enables us to image a sample conventionally by SEM as well as to investigate the local surface topography by AFM or STM. This device...

  • 1 nm deep mechanical processing of muscovite mica by atomic force microscopy. Miyake, Shojiro // Applied Physics Letters;11/13/1995, Vol. 67 Issue 20, p2925 

    Examines the atomic-scale mechanical processing of muscovite mica using an atomic force microscope. Use of scanning tunneling microscopy; Importance of atomic force microscope in the micromechanical processing; Impact of non-observance of surface atoms on mechanical processing on the atomic scale.

  • Limits of imaging resolution for atomic force microscopy of molecules. Weihs, T.P.; Nawaz, Z.; Jarvis, S.P.; Pethica, J.B. // Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3536 

    Examines the use of imaging resolution for the atomic force microscopy of molecules. Use of the nanoindenter in elastic modulus and LB film measurement; Method in determining the imaging resolution; Comparison between the atomic force microscope and scanning tunneling microscopic.

  • Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques... Fontaine, P.A.; Dubois, E.; Stievenard, D. // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p1776 

    Compares the nanolithography techniques of scanning tunneling microscope (STM) and atomic force microscope (AFM) which were based on local oxidation of silicon. Importance of lithography; How the nanolithography is performed; Advantages which AFM have over the STM; Conclusion drawn from the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics