TITLE

Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction

AUTHOR(S)
Sungho Kim; Hu Young Jeong; Sung-Yool Choi; Yang-Kyu Choi
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p033508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The reversible resistance switching (RS) effect of the Al/TiOx/TiO2/Al heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the TiOx layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system.
ACCESSION #
52479345

 

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