TITLE

Investigation of metallic interdiffusion in Al xGa1− xN/GaN/sapphire heterostructures used for microelectronic devices by SEM/EDX and SIMS depth profiling

AUTHOR(S)
Téllez, H.; Vadillo, J. M.; Laserna, J. J.
PUB. DATE
August 2010
SOURCE
Analytical & Bioanalytical Chemistry;Aug2010, Vol. 397 Issue 7, p2865
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Secondary ion mass spectrometry (SIMS) depth profiling has been applied to the study of the thermal annealing of ohmic contacts for high electron mobility transistors. The metallic stacks (Ti/Al/Ni/Au) were deposited over the Al0.28Ga0.72N/GaN/sapphire heterostructures and subjected to a rapid thermal annealing (850 °C for 30 s under N2 atmosphere) to improve the contact performance. The surface morphology and the in-depth chemical distribution of the layered contacts were severely modified due to the treatment. These modifications have been analyzed by SIMS depth profiling and scanning electron microscopy–energy-dispersive X-ray microanalysis. The SIMS analysis conditions have been optimized to achieve simultaneously good sensitivity and to avoid ion-induced mixing effects produced by the primary beam sputtering.
ACCESSION #
52299476

 

Related Articles

  • Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP. Schwarz, S.A.; Pudensi, M.A.A. // Applied Physics Letters;3/2/1992, Vol. 60 Issue 9, p1123 

    Determines the high-resolution secondary ion mass spectrometry depth profiles of germanium/palladium (Pd) ohmic contacts on indium phosphide. Formation of a Pd-indium-phosphorus alloy layer; Dependence of the thickness of the layer on the amount of metallic Pd; Detection of germanium on the...

  • Low temperature operation of Ge-Ag ohmic contacts to a high mobility two dimensional electron gas. Chabasseur-Molyneux, V.; Frost, J. E. F.; Tribble, M. J.; Grimshaw, M. P.; Ritchie, D. A.; Churchill, A. C.; Jones, G. A. C.; Pepper, M.; Burroughes, J. H. // Journal of Applied Physics;11/1/1993, Vol. 74 Issue 9, p5883 

    Presents a study which demonstrated germanium-silver ohmic contacts with good dimensional control to a two dimensional electron gas operating at low temperatures. Result of secondary ion mass spectroscopy for the annealed sample; Factor that contributed to the contact resistance; Potential...

  • Very strong negative differential resistance real-space transfer transistor using a multiple.... Wu, C.L.; Hsu, W.C. // Applied Physics Letters;2/6/1995, Vol. 66 Issue 6, p739 

    Investigates the effective real-space transfer process of hot electrons that resulted into a very strong negative differential resistance. Role of pseudomorphic heterostructure; Effect of structure on carrier mobility; Information on secondary-ion mass spectrometry profile.

  • High depth resolution Secondary Ion Mass Spectrometry (SIMS) analysis of Si[sub 1-x]Ge[sub x]:C HBT structures. Lu, S.; Kottke, M.; Zollner, S.; Chen, W. // AIP Conference Proceedings;2001, Vol. 550 Issue 1, p672 

    Low energy Secondary Ion Mass Spectrometry (SIMS) was employed to study graded-base Si[sub 1-x]Ge[sub x] : C heterostructure bipolar transistors (HBTs) structural properties. Using an O[sub 2][sup +] beam at 500 eV with normal incident angle, Ge profiles can be quantified by minimizing the...

  • Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide. Lee, Chi-Ling; Lee, Wei-I // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p181125 

    Indium tin oxide (ITO), with its transparency and strong adhesion to GaN, has been used as a replacement for Ni/Au as a contact on p-GaN. However, ITO suffers from high contact resistance on p-GaN. In this work, low contact resistance between ITO and the p-GaN layer was consistently achieved...

  • Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures. Shimizu, Y.; Kawamura, Y.; Uematsu, M.; Tomita, M.; Kinno, T.; Okada, N.; Kato, M.; Uchida, H.; Takahashi, M.; Ito, H.; Ishikawa, H.; Ohji, Y.; Takamizawa, H.; Nagai, Y.; Itoh, K. M. // Journal of Applied Physics;Feb2011, Vol. 109 Issue 3, p036102 

    We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct...

  • Self-diffusion in [sup 69]Ga[sup 121]Sb/[sup 71]Ga[sup 123]Sb isotope heterostructures. Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F. // Journal of Applied Physics;5/15/2001, Vol. 89 Issue 10, p5393 

    Gallium and antimony self-diffusion experiments have been performed in undoped [sup 69]Ga[sup 121]Sb/[sup 71]Ga[sup 123]Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal...

  • Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes. Jeon, Joon-Woo; Park, Seong-Han; Jung, Se-Yeon; Lee, Sang Youl; Moon, Jihyung; Song, June-O; Seong, Tae-Yeon // Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092103 

    We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al–Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al–Ga solid solution layer is...

  • The specific contact resistance of Ohmic contacts to HgTe/Hg1-xCdxTe heterostructures. Leech, Patrick W. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p907 

    Presents a study which measured the specific contact resistance of Ohmic contacts to HgTe/Hg[sub1-x]Cd[subx]Te heterostructures. Use of a transmission line model; Comparative measurments of metal junctions; Characteristics of the heterostructures.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics