TITLE

On the inverse field dependence of conductivity in disordered organic materials

AUTHOR(S)
Ikrelef, N.; Bourbie, D.; Driss-Khodja, K.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Recently the change in temperature dependence of conductivity observed in polymer memory device prepared from polythiophene, has been attributed to a field-induced transition from a charge-injection-limited current to a trap controlled current. Under a high electrical field, the conductivity becomes independent on temperature and depends exponentially on the inverse of the applied field. In this paper we present a theoretical interpretation of this behavior in the framework of hopping mechanism, where the physical feature is the field effect on the tunneling probability.
ACCESSION #
52289461

 

Related Articles

  • Current-voltage and capacitance-voltage characteristics of a metal/Al0.5Ga0.5As/GaAs capacitor. Drummond, T. J.; Fischer, R.; Arnold, D.; Morkoç, H.; Shur, M. S. // Applied Physics Letters;1984, Vol. 44 Issue 2, p214 

    The dependence of current and capacitance on gate voltage for a metal/Al0.5Ga0.5As/GaAs capacitor is reported as a function of temperature between 300 and 77 K. The capacitor has an Al Schottky gate, a 400-Å-thick layer of Al0.5Ga0.5As as an insulator, and a 1-μm-thick layer of n--GaAs on...

  • Slow relaxation and electric field quenching of persistent conductivity in GaAs metal-semiconductor field-effect transistors with different buffer layer structures. Liou, Jenn-Chorng; Lau, Kei May // Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2010 

    Slow relaxation in photoconductivity and high transverse field effects have been investigated in GaAs metal-semiconductor field-effect transistors with undoped GaAs buffers and AlGaAs/GaAs superlattice buffers. Persistent photoconductivity (PPC) has been observed in both types of devices at 77...

  • Electric-field-induced superconductivity in an insulator. Ueno, K.; Nakamura, S.; Shimotani, H.; Ohtomo, A.; Kimura, N.; Nojima, T.; Aoki, H.; Iwasa, Y.; Kawasaki, M. // Nature Materials;Nov2008, Vol. 7 Issue 11, p855 

    Electric field control of charge carrier density has long been a key technology to tune the physical properties of condensed matter, exploring the modern semiconductor industry. One of the big challenges is to increase the maximum attainable carrier density so that we can induce...

  • Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications. Toh, Eng-Huat; Wang, Grace Huiqi; Samudra, Ganesh; Yeo, Yee-Chia // Journal of Applied Physics;May2008, Vol. 103 Issue 10, p104504 

    The device physics and electrical characteristics of the germanium (Ge) tunneling field-effect transistor (TFET) are investigated for high performance and low power logic applications using two dimensional device simulation. Due to the high band-to-band tunneling rate of Ge as compared to Si,...

  • Effect of electron-beam irradiation on graphene field effect devices. Childres, Isaac; Jauregui, Luis A.; Foxe, Michael; Tian, Jifa; Jalilian, Romaneh; Jovanovic, Igor; Chen, Yong P. // Applied Physics Letters;10/25/2010, Vol. 97 Issue 17, p173109 

    Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here, we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of graphene field-effect transistors (GFETs). Exposure to a...

  • Negative differential transconductance in electrolyte-gated ruthenate. Hassan, Muhammad Umair; Dhoot, Anoop Singh; Wimbush, Stuart C. // Applied Physics Letters;1/19/2015, Vol. 106 Issue 3, p1 

    We report on a study of electric field-induced doping of the highly conductive ruthenate SrRuO3 using an ionic liquid as the gate dielectric in a field-effect transistor configuration. Two distinct carrier transport regimes are identified for increasing positive gate voltage in thin (10 nm)...

  • Field-induced crossover from phonon to field assisted hopping conductivity in organic materials. Bourbie, D. // Applied Physics Letters;1/3/2011, Vol. 98 Issue 1, p012104 

    Recently the change in temperature dependence of conductivity observed in polythiophene field-effect transistors has been attributed to field-induced metal-insulator transition. Under a high source-drain voltage, the conductivity becomes independent from temperature and depends exponentially on...

  • Depletion charge measurements by tunneling spectroscopy GaAs-GaAlAs field-effect transistors. Smoliner, J.; Gornik, E.; Weimann, G. // Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2136 

    The subband energies on GaAs-GaAlAs field-effect transistor samples were measured by tunneling spectroscopy using a structure, where the tunneling process starts from an accumulation layer, and a conventional structure, where the electrons tunnel from a metal electrode into the two-dimensional...

  • Joule's law for organic transistors exploration: Case of contact resistance. Xu, Yong; Liu, Chuan; Li, Yun; Minari, Takeo; Darmawan, Peter; Balestra, Francis; Ghibaudo, Gerard; Tsukagoshi, Kazuhito // Journal of Applied Physics;Feb2013, Vol. 113 Issue 6, p064507 

    Joule's law opens a straightforward way to explore the operating mechanism of organic field-effect transistors, from the angle of inner transported heating. The microscopic dissipated power is calculated from the local conductivity and electric field, which solves the widespread difficulties in...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics