TITLE

Temperature-dependent dielectric relaxation in bismuth zinc niobate thin films

AUTHOR(S)
Booth, James C.; Orloff, Nathan D.; Cagnon, Joel; Jiwei Lu; Stemmer, Susanne
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We apply broadband measurement techniques to determine the dielectric permittivity of Bi1.5Zn1.0Nb1.5O7 (BZN) thin films over the frequency range 1 kHz to 40 GHz. At room temperature, the permittivity function shows relaxation at high frequencies (∼1 GHz), and as the temperature is reduced, the onset of relaxation rapidly moves to lower frequencies, reaching ∼1 kHz at 100 K. The observed frequency-dependent dielectric response of BZN thin films is quantitatively similar to the response of bulk ceramics, which suggests that the intrinsic disorder in the BZN material system can be conveniently explored via measurements on thin films.
ACCESSION #
52289459

 

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