Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1-xMnxTe

Lechner, R. T.; Springholz, G.; Hassan, M.; Groiss, H.; Kirchschlager, R.; Stangl, J.; Hrauda, N.; Bauer, G.
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023101
Academic Journal
Ferromagnetic Ge1-xMnxTe grown by molecular beam epitaxy with Mn content of xMn≈0.5 is shown to exhibit a strong tendency for phase separation. At higher growth temperatures apart from the cubic Ge0.5Mn0.5Te, a hexagonal MnTe and a rhombohedral distorted Ge0.83Mn0.17Te phase is formed. This coexistence of antiferromagnetic MnTe and ferromagnetic Ge0.5Mn0.5Te results in magnetic exchange-bias effects.


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