TITLE

Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

AUTHOR(S)
Ťapajna, M.; Mishra, U. K.; Kuball, M.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Early stage degradation of AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off- and on-state voltage bias stress was studied using UV light-assisted drain current trapping characteristics. Besides electronic traps generated underneath the gate during off-state stress, both stress conditions lead to trap generation in the transistor access region close to the drain side of the gate edge. UV light-assisted trapping analysis strongly indicates these traps to be located in the AlGaN subsurface layer of the AlGaN/GaN HEMT. Trap evolution during off-state stress performed at base plate temperatures from room temperature to 150 °C was found to exhibit an activation energy of 0.26 eV, consistent with impurity diffusion along dislocations.
ACCESSION #
52289452

 

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