Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

Ťapajna, M.; Mishra, U. K.; Kuball, M.
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023503
Academic Journal
Early stage degradation of AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off- and on-state voltage bias stress was studied using UV light-assisted drain current trapping characteristics. Besides electronic traps generated underneath the gate during off-state stress, both stress conditions lead to trap generation in the transistor access region close to the drain side of the gate edge. UV light-assisted trapping analysis strongly indicates these traps to be located in the AlGaN subsurface layer of the AlGaN/GaN HEMT. Trap evolution during off-state stress performed at base plate temperatures from room temperature to 150 °C was found to exhibit an activation energy of 0.26 eV, consistent with impurity diffusion along dislocations.


Related Articles

  • Low-temperature mobilities and energy loss rates of two-dimensional electrons in Si inversion layers. Kyung Hwa Park; Hirakawa, Kazuhiko; Takagi, Shinichi // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p601 

    We have investigated mobilities of two-dimensional (2D) in n-type Si-metal oxide semiconductor field effect transistors (Si-MOSFETs) and observed anomalously strong temperature dependence of mobility in the low electron density regions at low temperatures. It is found that the observed strong...

  • GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements. Mansfield, L. M.; Bertness, K. A.; Blanchard, P. T.; Harvey, T. E.; Sanders, A. W.; Sanford, N. A. // Journal of Electronic Materials;Apr2009, Vol. 38 Issue 4, p495 

    We obtained the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current–voltage measurements were performed on single-nanowire devices in the dark and under 360 nm illumination. Field-emission scanning...

  • The effect of ultraviolet light on structural properties of exfoliated and CVD graphene. Emelianov, A. V.; Kireev, D.; Levin, D. D.; Bobrinetskiy, I. I. // Applied Physics Letters;10/24/2016, Vol. 109 Issue 17, p173101-1 

    We investigate the effect of UV processing of graphene with different structural properties prepared by mechanical exfoliation and CVD growth. Depending on UV exposure time, we observe different effects like oxidation, doping, and etching. For bi-layered and few-layered graphene flakes, we do...

  • THRESHOLD VOLTAGE CONTROL SCHEMES IN FINFETS. Narendar, V.; Mishra, Ramanuj; Rai, Sanjeev; Nayana, R.; Mishra, R. A. // International Journal of VLSI Design & Communication Systems;Apr2012, Vol. 3 Issue 2, p175 

    Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget...

  • Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG-Doped Deep Trench of p-Pillar. Sang Gi Kim; Hoon Soo Park; Kyoung ll Na; Seong Wook Yoo; Jongil Won; Jin Gun Koo; Sang Hoon Chai; Hyung-Moo Park; Yil Suk Yang; Jin Ho Lee // ETRI Journal;Aug2013, Vol. 35 Issue 4, p632 

    In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the...

  • Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors. Wang, W.; Deng, J.; Hwang, J. C. M.; Xuan, Y.; Wu, Y.; Ye, P. D. // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072102 

    Charge pumping was used to characterize the interface traps between Al2O3 and In0.75Ga0.25As in an n-channel inversion-mode metal-oxide-semiconductor field-effect transistor (MOSFET). By analyzing the charge pumped under gate voltage pulses of different rise and fall times, the interface trap...

  • Simultaneous shallow-junction formation and gate doping p-channel metal-semiconductor-oxide.... Wei-Ming Chen; Jengping Lin // Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p345 

    Examines the fabrication of submicron p-metal-semiconductor-oxide field-effect transistors. Use of cobalt silicide as diffusion source for p-junction formation and doping source for amorphous silicon gate; Effect of as-deposited amorphous silicon on CoSi[sub 2] thermal stability; Role of...

  • Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition. Sang Soo Kim; Won-Ju Cho; Chang-Geun Ahn; Kiju Im; Jong-Heon Yang; In-Bok Baek; Seongjae Lee; Koeng Su Lim // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p223502 

    The fin field-effect transistor (FET) silicon nanocrystal floating gate memory using the photochemical vapor deposition and the plasma doping processes was proposed. The silicon nanocrystals with a uniform size were formed on a vertical sidewall surface of the fin channel by the photochemical...

  • Nanopatterning of epitaxial CoSi2 using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors. Zhao, Q.T.; Kluth, P.; Bay, H. L.; Lenk, St.; Mantl, S. // Journal of Applied Physics;11/15/2004, Vol. 96 Issue 10, p5775 

    A patterning method for the generation of epitaxial CoSi2 nanostructures was developed based on anisotropic diffusion of Co/Si atoms in a stress field during rapid thermal oxidation (RTO). The stress field is generated along the edge of a mask consisting of a thin SiO2 layer and a Si3N4 layer....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics