Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k /WAlx/TiSiN gate stack

Chang Seo Park; Hussain, Muhamad M.; Bersuker, Gennadi; Kirsch, Paul D.; Jammy, Raj
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023501
Academic Journal
A metal/high-k gate stack with a p-type band edge effective work function (EWF) of about 5.0 eV is demonstrated using a thin WAlx capping layer. The WAlx stack exhibits a lower threshold voltage (higher flatband voltage) value and better equivalent oxide thickness scalability than previously reported high EWF gate stacks using an AlOx cap. The WAlx cap p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) show significantly improved negative bias temperature instability (NBTI) characteristics than AlOx-capped pMOSFETs, which is attributed to negligible diffusion of Al into the interfacial oxide layer adjacent to the Si substrate.


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